NTHD2102PT1G ON Semiconductor, NTHD2102PT1G Datasheet - Page 5

• Manufacturer Part Number: NTHD2102PT1G
• Description: MOSFET PWR P-CH DUAL 8V CHIPFET
• Manufacturer: ON Semiconductor

Specifications of NTHD2102PT1G

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 58 mOhm @ 3.4A, 4.5V
• Drain To Source Voltage (vdss): 8V
• Current - Continuous Drain (id) @ 25° C: 3.4A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 2.5V
• Input Capacitance (ciss) @ Vds: 715pF @ 6.4V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 8-ChipFET™
• Configuration: Dual Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.058 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 8 S
• Drain-source Breakdown Voltage: 8 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 3.4 A
• Power Dissipation: 1100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTHD2102PT1GOS; NTHD2102PT1GOS; NTHD2102PT1GOSTR

0.01
0.01
0.1
0.1
2
1
2
1
10
10
−4
0.02
−4
Duty Cycle = 0.5
0.2
0.1
0.05
0.05
0.02
0.2
0.1
Duty Cycle = 0.5
Single Pulse
Single Pulse
Figure 11. Normalized Thermal Transient Impedance, Junction−to−Ambient
Figure 12. Normalized Thermal Transient Impedance, Junction−to−Foot
10
−3
10
−3
TYPICAL ELECTRICAL CHARACTERISTICS
10
−2
Square Wave Pulse Duration (sec)
Square Wave Pulse Duration (sec)
http://onsemi.com
10
−2
NTHD2102P
10
−1
5
10
1
−1
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
JM −
10
T
P DM
A
= P
1
DM
t 1
Z
t 2
qJA
t 1
t 2
qJA
(t)
100
= 90°C/W
600
10