NTLJD3115PT1G ON Semiconductor, NTLJD3115PT1G Datasheet - Page 5

• Manufacturer Part Number: NTLJD3115PT1G
• Description: MOSFET P-CHAN DUAL 20V 6-WDFN
• Manufacturer: ON Semiconductor
• Type: Power MOSFETr

Specifications of NTLJD3115PT1G

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 100 mOhm @ 2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 6.2nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 531pF @ 10V
• Power - Max: 710mW
• Mounting Type: Surface Mount
• Package / Case: 6-VDFN Exposed Pad
• Number Of Elements: 2
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.1Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±8V
• Continuous Drain Current: 3.3A
• Power Dissipation: 1.5W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: WDFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTLJD3115PT1G; NTLJD3115PT1GOSTR

1000
1200
1000
100
800
600
400
200
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
10
1
0
1
5
V
C
V
I
V
C
DS
D
t
rss
DD
GS
t
iss
d(on)
d(off)
= −2.2 A
V
= 0 V
GS
t
t
= −15 V
= −4.5 V
r
f
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
0
Figure 7. Capacitance Variation
R
V
G
GS
V
, GATE RESISTANCE (OHMS)
DS
= 0 V
C
TYPICAL PERFORMANCE CURVES
oss
5
10
0.01
100
0.1
10
1
0.1
10
T
SINGLE PULSE
*See Note 2 on Page 1
T
Figure 11. Maximum Rated Forward Biased
J
C
−V
= 150°C
= 25°C
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
15
T
R
THERMAL LIMIT
PACKAGE LIMIT
J
DS(on)
= 25°C
Safe Operating Area
http://onsemi.com
1
100
LIMIT
20
5
5
4
3
2
1
0
0
2.5
1.5
0.5
(T
V
3
2
1
0
Figure 8. Gate−To−Source and Drain−To−Source
Q
DS
0
Figure 10. Diode Forward Voltage versus Current
J
GS
10
= 25°C unless otherwise noted)
V
GS
0.1
−V
1
SD
= 0 V
Q
10 ms
1 ms
10 ms
100 ms
dc
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
0.2
Voltage versus Total Charge
Q
G
GD
, TOTAL GATE CHARGE (nC)
T
J
2
= 150°C
0.3
100
0.4
QT
3
0.5
0.6
4
V
GS
T
J
0.7
= 25°C
I
T
D
J
= −2.2 A
= 25°C
5
0.8
0.9
6
20
16
12
4
0
8
1.0