NTLJD3115PT1G ON Semiconductor, NTLJD3115PT1G Datasheet - Page 6
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NTLJD3115PT1G
Manufacturer Part Number
NTLJD3115PT1G
Description
MOSFET P-CHAN DUAL 20V 6-WDFN
Manufacturer
ON Semiconductor
Type
Power MOSFETr
Datasheet
1.NTLJD3115PTAG.pdf
(7 pages)
Specifications of NTLJD3115PT1G
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
100 mOhm @ 2A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2.3A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
6.2nC @ 4.5V
Input Capacitance (ciss) @ Vds
531pF @ 10V
Power - Max
710mW
Mounting Type
Surface Mount
Package / Case
6-VDFN Exposed Pad
Number Of Elements
2
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.1Ohm
Drain-source On-volt
20V
Gate-source Voltage (max)
±8V
Continuous Drain Current
3.3A
Power Dissipation
1.5W
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
6
Package Type
WDFN
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NTLJD3115PT1G
NTLJD3115PT1GOSTR
NTLJD3115PT1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTLJD3115PT1G
Manufacturer:
ON/安森美
Quantity:
20 000
1000
100
0.000001
0.1
10
1
0.05
0.02
0.01
D = 0.5
0.2
0.1
0.00001
SINGLE PULSE
TYPICAL PERFORMANCE CURVES
0.0001
0.001
Figure 12. Thermal Response
http://onsemi.com
0.01
t, TIME (s)
6
P
(pk)
DUTY CYCLE, D = t
(T
t
J
1
0.1
= 25°C unless otherwise noted)
t
2
1
1
/t
2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
J(pk)
− T
10
A
*See Note 2 on Page 1
= P
(pk)
1
R
qJA
100
(t)
1000