UPA1890GR-9JG-E2-A Renesas Electronics America, UPA1890GR-9JG-E2-A Datasheet - Page 12

• Manufacturer Part Number: UPA1890GR-9JG-E2-A
• Description: MOSFET N/P-CH 30V 8-SOIC
• Manufacturer: Renesas Electronics America

Specifications of UPA1890GR-9JG-E2-A

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 27 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6A, 5A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 748pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

C) Common
10
1000
100
0.1
10
1
1m
10m
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Data Sheet G14762EJ2V0DS
100m
PW - Pulse Width - S
1
10
Mounted on Ceramic Substrate
of 5000 mm x 1.1 mm
Single Pulse
P
D
(FET1):P
2
D
(FET2) = 1:1
100
62.5 ˚C/W
1000
PA1890