UPA1890GR-9JG-E2-A Renesas Electronics America, UPA1890GR-9JG-E2-A Datasheet - Page 12

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UPA1890GR-9JG-E2-A

Manufacturer Part Number
UPA1890GR-9JG-E2-A
Description
MOSFET N/P-CH 30V 8-SOIC
Manufacturer
Renesas Electronics America
Datasheet

Specifications of UPA1890GR-9JG-E2-A

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
27 mOhm @ 3A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
6A, 5A
Vgs(th) (max) @ Id
2.5V @ 1mA
Gate Charge (qg) @ Vgs
14nC @ 10V
Input Capacitance (ciss) @ Vds
748pF @ 10V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
C) Common
10
1000
100
0.1
10
1
1m
10m
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Data Sheet G14762EJ2V0DS
100m
PW - Pulse Width - S
1
10
Mounted on Ceramic Substrate
of 5000 mm x 1.1 mm
Single Pulse
P
D
(FET1):P
2
D
(FET2) = 1:1
100
62.5 ˚C/W
1000
PA1890

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