SI4974DY-T1-E3 Vishay, SI4974DY-T1-E3 Datasheet
SI4974DY-T1-E3
Specifications of SI4974DY-T1-E3
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SI4974DY-T1-E3 Summary of contents
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... Top View Ordering Information: Si4974DY-T1-E3 (Lead (Pb)-free) Si4974DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) Single Pulse Avalanche Current Avalanche Energy a Maximum Power Dissipation ...
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... Si4974DY Vishay Siliconix MOSFET SPECIFICATIONS T Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance b Diode Forward Voltage a Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time ...
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... I - Drain Current (A) D On-Resistance vs. Drain Current Total Gate Charge (nC) g Gate Charge Document Number: 73052 S09-0228-Rev. D, 09-Feb- Si4974DY Vishay Siliconix 125 ° ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics 1200 1000 800 600 400 C iss C oss 200 C rss Drain-to-Source Voltage (V) DS Capacitance 1 ...
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... Si4974DY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.0 0.3 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.4 0.2 0.0 - 0.2 - 0.4 - 0.6 - 0 Temperature (°C) J Threshold Voltage www.vishay.com °C J 0.9 1.2 1 250 µ 100 125 150 ...
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... Single Pulse 0. Document Number: 73052 S09-0228-Rev. D, 09-Feb- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4974DY Vishay Siliconix Notes Duty Cycle Per Unit Base = °C/W thJA ( ...
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... Si4974DY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Drain-to-Source Voltage (V) DS Output Characteristics 0.10 0. 0.04 0.02 0. Drain Current (A) D On-Resistance vs. Drain Current 0.0 0.5 1.0 1.5 2.0 2 Total Gate Charge (nC) g Gate Charge www.vishay.com thru 3.0 3.5 4 ...
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... D 75 100 125 150 100 Limited by R DS(on 0 °C C Single Pulse 0.01 0 Drain-to-Source Voltage ( > minimum V at which Safe Operating Area, Junction-to-Case Si4974DY Vishay Siliconix 0.10 0. 0.06 0.04 0.02 0. Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 0.001 0.01 0.1 Time (s) Single Pulse Power, Junction-to-Ambient ...
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... Si4974DY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...