SI4974DY-T1-E3 Vishay, SI4974DY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4974DY-T1-E3
• Description: MOSFET DUAL N-CH 30V 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4974DY-T1-E3

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 19 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6A, 4.4A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 4.5V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 6A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 16mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI4974DY-T1-E3TR

CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73052
S09-0228-Rev. D, 09-Feb-09
0.05
0.04
0.03
0.02
0.01
0.00
40
35
30
25
20
15
10
6
5
4
3
2
1
0
5
0
0
0
0
V
I
D
DS
5
= 8 A
On-Resistance vs. Drain Current
= 15 V
V
GS
2
1
V
10
DS
= 4.5 V
Q
Output Characteristics
g
V
- Drain-to-Source Voltage (V)
I - Drain Current (A)
- Total Gate Charge (nC)
GS
D
15
Gate Charge
= 10 V thru 5 V
4
2
20
V
GS
6
3
25
= 10 V
4 V
30
8
4
35
40
10
5
1200
1000
800
600
400
200
40
35
30
25
20
15
10
1.6
1.4
1.2
1.0
0.8
0.6
5
0
0
- 50
0
0
C
On-Resistance vs. Junction Temperature
rss
V
I
- 25
D
GS
C
= 8 A
1
5
oss
= 10 V
V
V
GS
Transfer Characteristics
DS
T
0
J
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
25 °C
T
10
2
C
Capacitance
25
= 125 °C
15
3
50
Vishay Siliconix
C
iss
75
- 55 °C
Si4974DY
20
4
www.vishay.com
100
25
5
125
30
150
6
3