SIB911DK-T1-E3 Vishay, SIB911DK-T1-E3 Datasheet - Page 6

• Manufacturer Part Number: SIB911DK-T1-E3
• Description: MOSFET P-CH 20V PWRPAK SC75-6
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SIB911DK-T1-E3

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 295 mOhm @ 1.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.5A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 4nC @ 8V
• Input Capacitance (ciss) @ Vds: 115pF @ 10V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK SC-75-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SIB911DK-T1-E3TR

SiB911DK
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com
6
0.01
0.1
0.1
1
http://www.vishay.com/ppg?74475.
1
10
10
-4
-4
Duty Cycle = 0.5
Duty Cycle = 0.5
0.1
0.2
0.2
0.1
Single Pulse
Single Pulse
0.02
0.02
10
0.05
0.05
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
10
-3
10
-2
New Product
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-1
10
-2
1
10
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
-1
DM
JM
- T
t
A
1
= P
S-80515-Rev. B, 10-Mar-08
t
2
Document Number: 74475
DM
100
Z
thJA
thJA
t
t
1
2
(t)
= 100 °C/W
1000
1