SIB911DK Vishay, SIB911DK Datasheet
SIB911DK
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SIB911DK Summary of contents
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... 1. Ordering Information: SiB911DK-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range ...
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... SiB911DK Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...
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... Total Gate Charge (nC) g Gate Charge Document Number: 74475 S-80515-Rev. B, 10-Mar-08 New Product 2.0 2.5 3.0 200 160 120 = 4 2.0 2.5 3.0 SiB911DK Vishay Siliconix 1.0 0.8 0.6 0 125 °C C 0.2 25 ° °C 0.0 0.0 0.5 1.0 1 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss 80 C oss 40 C ...
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... SiB911DK Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.1 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Soure-Drain Diode Forward Voltage 0.8 0 250 µA D 0.6 0.5 0.4 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.8 0.7 0.6 0 °C 0.4 J 0.3 0.2 0.1 0.8 1.0 1.2 75 100 125 150 10 Limited ...
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... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 74475 S-80515-Rev. B, 10-Mar-08 New Product 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper SiB911DK Vishay Siliconix 100 125 T - Case Temperature (°C) C Power Derating www.vishay.com 150 5 ...
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... SiB911DK Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www ...
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... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...