SIB911DK Vishay, SIB911DK Datasheet - Page 4

• Manufacturer Part Number: SIB911DK
• Description: Dual P-channel 20-v D-s Mosfet
• Manufacturer: Vishay

SiB911DK
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.1
0.8
0.7
0.6
0.5
0.4
0.3
10
1
0.0
- 50
Soure-Drain Diode Forward Voltage
- 25
0.2
V
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
0.4
I
D
T
J
T
= 250 µA
25
- Temperature (°C)
J
= 150 °C
0.6
50
75
0.8
0.01
0.1
10
1
100
0.1
T
J
* V
1.0
Safe Operating Area, Junction-to-Ambient
= 25 °C
Single Pulse
GS
Limited by
125
T
A
= 25 °C
V
minimum V
New Product
1.2
150
DS
- Drain-to-Source Voltage (V)
R
DS(on)*
1
GS
BV
at which R
DSS
I
Limited
DM
Limited
DS(on)
10
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
8
6
4
2
0
0.001
is specified
0
100 µs
1 ms
10 ms
1 s, 10 s
DC
100 ms
On-Resistance vs. Gate-to-Source Voltage
I
Single Pulse Power, Junction-to-Ambient
D
= 1.5 A
0.01
100
1
V
GS
25 °C
- Gate-to-Source Voltage (V)
0.1
2
Time (s)
1
S-80515-Rev. B, 10-Mar-08
125 °C
Document Number: 74475
3
10
4
100
1000
5