IRF7311TR International Rectifier, IRF7311TR Datasheet
IRF7311TR
Specifications of IRF7311TR
Available stocks
Related parts for IRF7311TR
IRF7311TR Summary of contents
Page 1
... Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power ...
Page 2
IRF7311 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...
Page 3
VGS TOP 7.50V 4.50V 4.00V 3.50V 3.00V 2.70V 2.00V BOTTOM 1.50V 10 1.50V 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 ° ...
Page 4
IRF7311 2.0 6. 1.5 1.0 0.5 0.0 -60 -40 - Junction Temperature ( C) J Fig 5. Normalized On-Resistance Vs. Temperature ...
Page 5
iss ...
Page 6
IRF7311 SO-8 Package Details 0.25 [.010 NOT DIMENSIONING & T OLERANCING PER AS ME Y14.5M-1994. ...
Page 7
SO-8 Tape and Reel . . ...