IRF7342 International Rectifier, IRF7342 Datasheet - Page 2

MOSFET 2P-CH 55V 3.4A 8-SOIC

IRF7342

Manufacturer Part Number
IRF7342
Description
MOSFET 2P-CH 55V 3.4A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7342

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
105 mOhm @ 3.4A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
3.4A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
38nC @ 10V
Input Capacitance (ciss) @ Vds
690pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF7342

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IRF7342
Source-Drain Ratings and Characteristics
Electrical Characteristics @ T
I
I
V
t
Q
Notes:
V
V
g
Q
Q
Q
t
t
t
t
C
C
C
R
I
SM
S
rr
d(on)
r
d(off)
f
I
DSS
V
fs
GSS
SD
(BR)DSS
GS(th)
iss
oss
rss
rr
g
gs
gd
DS(on)
max. junction temperature. ( See fig. 11 )
Repetitive rating; pulse width limited by
(BR)DSS
Starting T
R
2
G
= 25 , I
/ T
J
J
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
= 25°C, L = 20mH
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
AS
= -3.4A. (See Figure 8)
Parameter
Parameter
J
= 25°C (unless otherwise specified)
T
Pulse width 300µs; duty cycle 2%.
When mounted on 1 inch square copper board, t<10 sec
I
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
–––
SD
––– -0.054 –––
––– 0.095 0.105
––– 0.150 0.170
-1.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-55
3.3
J
150°C
-3.4A, di/dt
–––
–––
–––
–––
–––
–––
690
210
–––
–––
–––
––– -100
3.0
8.4
54
85
26
14
10
22
43
86
-1.2
130
–––
–––
-2.0
100
–––
–––
–––
–––
-25
-2.0
-27
4.5
80
38
13
22
15
64
32
-150A/µs, V
V/°C
nC
µA
nA
nC
ns
pF
ns
V
V
V
S
A
showing the
p-n junction diode.
T
T
di/dt = -100A/µs
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz, See Fig. 9
MOSFET symbol
integral reverse
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= -3.1A
= -1.0A
= 25°C, I
= 25°C, I
DD
= 16 ,
= 6.0
= V
= -20V
= 20V
= 0V, I
= -10V, I
= -4.5V, I
= -10V, I
= -55V, V
= -55V, V
= -44V
= -10V, See Fig. 10
= 0V
= -25V
= -28V
GS
Conditions
V
(BR)DSS
, I
D
S
F
D
Conditions
= -250µA
D
D
= -2.0A, V
= -2.0A
D
= -250µA
GS
GS
= -3.4A
= -3.1A
= -2.7A
,
= 0V
= 0V, T
D
www.irf.com
= -1mA
GS
J
= 55°C
= 0V
G
S
D

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