IRF7342 International Rectifier, IRF7342 Datasheet - Page 4

• Manufacturer Part Number: IRF7342
• Description: MOSFET 2P-CH 55V 3.4A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7342

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 105 mOhm @ 3.4A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 3.4A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 690pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7342

IRF7342
4
Fig 7. Typical On-Resistance Vs. Gate
2.0
1.5
1.0
0.5
0.0
0 . 4 5
0 . 3 5
0 . 2 5
0 . 1 5
0 . 0 5
Fig 5. Normalized On-Resistance
-60 -40 -20
2
I =
D
-3.4 A
-V
T , Junction Temperature ( C)
G S
Vs. Temperature
J
5
0
, G ate-to-S ource V oltage (V)
Voltage
I
D
20
= -3.4 A
40
8
60
80 100 120 140 160
1 1
V
°
GS
=
-10V
1 4
A
0.240
0.200
0.160
0.120
0.080
Fig 6. Typical On-Resistance Vs. Drain
300
250
200
150
100
Fig 8. Maximum Avalanche Energy
50
0
25
0
Starting T , Junction Temperature ( C)
Vs. Drain Current
2
50
-I
VGS = -4.5V
D
J
, Drain Current (A)
4
Current
75
6
100
TOP
BOTTOM
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8
VGS = -10V
125
10
-1.5A
-2.7A
-3.4A
°
I D
150
12