IRF9953 International Rectifier, IRF9953 Datasheet - Page 3
![MOSFET 2P-CH 30V 2.3A 8-SOIC](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF9953
Manufacturer Part Number
IRF9953
Description
MOSFET 2P-CH 30V 2.3A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF9953.pdf
(7 pages)
Specifications of IRF9953
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
250 mOhm @ 1A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
2.3A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
12nC @ 10V
Input Capacitance (ciss) @ Vds
190pF @ 15V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF9953
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF9953PBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRF9953TRPBF
Manufacturer:
International Rectifier
Quantity:
31 817
Part Number:
IRF9953TRPBF
Manufacturer:
IR
Quantity:
20 000
1 0 0
1 0 0
0 . 1
0 . 1
1 0
1 0
Fig 1. Typical Output Characteristics
1
Fig 3. Typical Transfer Characteristics
1
3 . 0
0 . 1
TOP
BOTT OM - 3.0V
-V
-V
T = 2 5 ° C
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
4 . 0
J
VGS
G S
D S
, Ga te-to-S o urce V oltage (V )
, D rain-to-S ource V oltage (V )
T = 1 5 0 °C
J
5 . 0
1
V
2 0 µ s P U L S E W ID T H
20 µs P U LSE W IDTH
T = 25 °C
6 . 0
DS
J
= -1 0 V
-3.0 V
7 . 0
8 . 0
1 0
A
A
1 0 0
0 . 1
1 0 0
1 0
0 . 1
1 0
1
1
0 . 4
Fig 2. Typical Output Characteristics
0 . 1
Fig 4. Typical Source-Drain Diode
TOP
BOTT OM - 3.0V
-V
-V
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
0 . 6
S D
VGS
D S
T = 1 50 °C
, Source-to-D rain V oltage (V )
J
Forward Voltage
, D rain-to-S ource V oltage (V )
0 . 8
1
T = 25 °C
J
IRF9953
1 . 0
20 µs P U LSE W IDTH
T = 15 0°C
J
-3 .0V
1 . 2
V
G S
= 0 V
1 . 4
1 0
A
A