IRF9953 International Rectifier, IRF9953 Datasheet - Page 4
![MOSFET 2P-CH 30V 2.3A 8-SOIC](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF9953
Manufacturer Part Number
IRF9953
Description
MOSFET 2P-CH 30V 2.3A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF9953.pdf
(7 pages)
Specifications of IRF9953
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
250 mOhm @ 1A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
2.3A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
12nC @ 10V
Input Capacitance (ciss) @ Vds
190pF @ 15V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF9953
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF9953PBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRF9953TRPBF
Manufacturer:
International Rectifier
Quantity:
31 817
Part Number:
IRF9953TRPBF
Manufacturer:
IR
Quantity:
20 000
IRF9953
Fig 7. Typical On-Resistance Vs. Gate
0 . 8 0
0 . 6 0
0 . 4 0
0 . 2 0
0 . 0 0
2.0
1.5
1.0
0.5
0.0
Fig 5. Normalized On-Resistance
0
-60 -40 -20
I =
D
-V
-1.0A
G S
Vs. Temperature
T , Junction Temperature ( C)
3
J
, G ate -to-S ource V oltage ( V)
Voltage
0
20 40 60 80 100 120 140 160
6
9
I
D
= -2.3A
V
1 2
°
GS
=
-10V
1 5
A
150
120
Fig 6. Typical On-Resistance Vs. Drain
2 . 5
2 . 0
1 . 5
1 . 0
0 . 5
0 . 0
90
60
30
0
0 . 0
25
Fig 8. Maximum Avalanche Energy
Starting T , Junction Temperature ( C)
1 . 0
50
Vs. Drain Current
-I , D rain C urrent (A )
J
D
Current
2 . 0
75
V
G S
100
3 . 0
= -4.5V
TOP
BOTTOM
V
G S
125
4 . 0
= -10V
-0.58A
-1.0A
-1.3A
°
I D
150
5 . 0
A