IRF7471 International Rectifier, IRF7471 Datasheet - Page 2

• Manufacturer Part Number: IRF7471
• Description: MOSFET
• Manufacturer: International Rectifier

Specifications of IRF7471

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 10A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 13mohm
• Rds(on) Test Voltage Vgs: 10V
• Power Dissipation Pd: 2.5W
• No. Of Pins: 8
• Thermal Resistance: 50°C/W
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Avalanche Characteristics
Diode Characteristics
IRF7471
Dynamic @ T
Static @ T
Symbol
E
I
R
V
V
V
I
Symbol
g
Q
Q
Q
Q
t
t
t
t
C
C
C
Symbol
I
I
t
Q
t
Q
I
AR
DSS
SM
d(on)
r
d(off)
f
S
rr
rr
GSS
V
AS
(BR)DSS
GS(th)
fs
SD
DS(on)
iss
oss
rss
g
gs
gd
oss
rr
rr
2
(BR)DSS
/ T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Drain-to-Source Leakage Current
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
Diode Forward Voltage
J
Static Drain-to-Source On-Resistance
= 25°C (unless otherwise specified)
J
Single Pulse Avalanche Energy
Avalanche Current
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
1.0
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
Min. Typ. Max. Units
40
22
–––
–––
––– 0.80
––– 0.65
–––
–––
–––
–––
0.043
2820 –––
–––
–––
–––
–––
–––
––– -200
–––
700
–––
–––
130
160
9.5
4.1
7.2
8.2
2.7
12
21
23
12
15
46
69
73
–––
100
200
–––
–––
–––
–––
–––
–––
–––
–––
100
200
110
240
3.0
1.3
–––
13
16
20
11
12
35
2.3
32
83
m
V/°C
µA
nA
ns
nC
nC
nC
pF
ns
ns
V
V
S
Typ.
A
V
–––
–––
I
V
V
V
V
V
V
V
V
V
V
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
showing the
p-n junction diode.
T
T
T
di/dt = 100A/µs
T
di/dt = 100A/µs
MOSFET symbol
integral reverse
D
D
Reference to 25°C, I
GS
GS
GS
DS
DS
DS
GS
GS
J
J
J
J
DS
DS
GS
GS
DD
GS
GS
DS
G
= 8.0A
= 8.0A
= 25°C, I
= 125°C, I
= 25°C, I
= 125°C, I
= 1.8
= V
= 0V, I
= 10V, I
= 4.5V, I
= 32V, V
= 32V, V
= 16V
= -16V
= 20V, I
= 20V
= 4.5V
= 0V, V
= 20V
= 4.5V
= 0V
= 20V
GS
, I
D
S
F
D
D
DS
D
Conditions
= 250µA
D
GS
GS
S
F
Conditions
Conditions
= 8.0A, V
= 8.0A, V
= 250µA
= 10A
= 8.0A
= 8.0A
= 8.0A, V
= 8.0A, V
= 16V
Max.
300
= 0V
= 0V, T
8.0
www.irf.com
D
GS
R
= 1mA
J
GS
= 20V
R
= 125°C
=20V
G
= 0V
= 0V
Units
mJ
A
D
S