IRF7103Q International Rectifier, IRF7103Q Datasheet - Page 2

• Manufacturer Part Number: IRF7103Q
• Description: MOSFET N-CH 50V 3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7103Q

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 130 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 255pF @ 25V
• Power - Max: 2.4W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 3A
• Drain Source Voltage Vds: 50V
• On Resistance Rds(on): 130mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: No
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7103Q

Electrical Characteristics @ T
IRF7103Q
Source-Drain Ratings and Characteristics

‚
ƒ
Notes:
V
V
g
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
R
I
d(on)
r
d(off)
f
SM
DSS
S
rr
V
fs
(BR)DSS
GS(th)
2
iss
oss
rss
SD
g
gs
gd
DS(on)
rr
(BR)DSS
Repetitive rating; pulse width limited by
Pulse width
max. junction temperature.
Surface mounted on 1 in square Cu board
/ T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
400µs; duty cycle
Parameter
Parameter
J
= 25°C (unless otherwise specified)
„
…
†
Min. Typ. Max. Units
I
Limited by T
Min. Typ. Max. Units
T
––– 0.057 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
R
–––
–––
–––
Starting T
1.0
3.4
SD
50
avalanche performance.
J
G
= 25 , I
175°C
2.0A, di/dt
–––
–––
–––
–––
–––
–––
–––
–––
––– -100
255
–––
1.2
2.8
5.1
1.7
2.3
10
15
69
29
35
45
J
= 25°C, L = 4.9mH
AS
Jmax
–––
130
–––
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
200
3.0
2.0
1.2
25
15
53
3.0
67
12
= 3.0A. (See Figure 12).
, see Fig.16c, 16d, 19, 20 for typical repetitive
155A/µs, V
V/°C
m
nC
pF
nC
ns
V
V
S
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs ‚
D
D
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
J
J
G
D
DD
= 2.0A
= 1.0A
= 25°C, I
= 25°C, I
= 6.0
= 25
= 0V, I
= 10V, I
= 4.5V, I
= V
= 15V, I
= 40V, V
= 40V, V
= 20V
= -20V
= 40V
= 10V
= 25V ‚
= 0V
= 25V
V
GS
Conditions
(BR)DSS
, I
D
S
F
D
D
D
Conditions
= 250µA
D
GS
GS
= 1.5A, V
= 1.5A
= 3.0A ‚
= 250µA
= 3.0A
= 1.5A ‚
,
= 0V
= 0V, T
D
www.irf.com
= 1mA
GS
J
= 55°C
= 0V
G
‚
D
S