IRF7103Q International Rectifier, IRF7103Q Datasheet - Page 4

• Manufacturer Part Number: IRF7103Q
• Description: MOSFET N-CH 50V 3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7103Q

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 130 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 255pF @ 25V
• Power - Max: 2.4W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 3A
• Drain Source Voltage Vds: 50V
• On Resistance Rds(on): 130mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: No
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7103Q

IRF7103Q
10000
1000
100
4
10
0.1
10
1
0.4
1
T = 175 C
Fig 7. Typical Source-Drain Diode
J
Fig 5. Typical Capacitance Vs.
V
V DS , Drain-to-Source Voltage (V)
SD
°
Drain-to-Source Voltage
0.6
,Source-to-Drain Voltage (V)
Forward Voltage
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
0.8
Crss
Ciss
Coss
10
T = 25 C
J
f = 1 MHZ
°
1.0
V
GS
SHORTED
= 0 V
1.2
100
0.01
100
0.1
10
12
Fig 8. Maximum Safe Operating Area
1
9
6
3
0
0
0
I
D
Tc = 25°C
Tj = 175°C
Single Pulse
Fig 6. Typical Gate Charge Vs.
=
2.0A
V DS , Drain-toSource Voltage (V)
Gate-to-Source Voltage
Q , Total Gate Charge (nC)
G
3
1
OPERATION IN THIS AREA
LIMITED BY R DS (on)
V
V
V
DS
DS
DS
= 40V
= 25V
= 10V
10
6
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100µsec
1msec
10msec
100
9
1000
12