NTMD2P01R2 ON Semiconductor, NTMD2P01R2 Datasheet
NTMD2P01R2
Manufacturer Part Number
NTMD2P01R2
Description
MOSFET PWR P-CHAN DUAL 16V 8SOIC
Manufacturer
ON Semiconductor
Datasheet
1.NTMD2P01R2.pdf
(6 pages)
Specifications of NTMD2P01R2
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
100 mOhm @ 2.4A, 4.5V
Drain To Source Voltage (vdss)
16V
Current - Continuous Drain (id) @ 25° C
2.3A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
18nC @ 4.5V
Input Capacitance (ciss) @ Vds
750pF @ 16V
Power - Max
710mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
NTMD2P01R2OS
NTMD2P01R2
Power MOSFET
−2.3 Amps, −16 Volts
Dual SOIC−8 Package
Features
•
•
•
•
•
Applications
•
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Minimum FR−4 or G−10 PCB, Steady State.
2. Mounted onto a 2″ square FR−4 Board (1 in sq, 2 oz Cu 0.06″ thick
3. Mounted onto a 2″ square FR−4 Board (1 in sq, 2 oz Cu 0.06″ thick
4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 2
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Thermal Resistance − Junction−to−Ambient
Thermal Resistance − Junction−to−Ambient
Thermal Resistance − Junction−to−Ambient
Operating and Storage
Single Pulse Drain−to−Source Avalanche
Maximum Lead Temperature for Soldering
Mounting Information for SOIC−8 Package Provided
Computers, Printers, PCMCIA Cards, Cellular and Cordless Telephones
High Efficiency Components in a Single SOIC−8 Package
High Density Power MOSFET with Low R
Logic Level Gate Drive
SOIC−8 Surface Mount Package,
Pb−Free Packages are Available
Power Management in Portable and Battery−Powered Products, i.e.:
single sided), Steady State.
single sided), t ≤ 10 seconds.
(Note 1)
Total Power Dissipation @ T
Continuous Drain Current @ T
Continuous Drain Current @ T
Pulsed Drain Current (Note 4)
(Note 2)
Total Power Dissipation @ T
Continuous Drain Current @ T
Continuous Drain Current @ T
Pulsed Drain Current (Note 4)
(Note 3)
Total Power Dissipation @ T
Continuous Drain Current @ T
Continuous Drain Current @ T
Pulsed Drain Current (Note 4)
Temperature Range
Energy − Starting T
(V
= −5.0 Apk, L = 28 mH, R
Purposes, 1/8″ from case for 10 seconds
DD
= −16 Vdc, V
Rating
GS
J
(T
= 25°C
= −4.5 Vdc, Peak I
J
= 25°C unless otherwise noted)
G
= 25 W)
A
A
A
= 25°C
= 25°C
= 25°C
A
A
A
A
A
A
= 100°C
= 100°C
= 100°C
= 25°C
= 25°C
= 25°C
L
Symbol
T
V
R
R
R
J
V
E
I
I
I
DS(on)
P
P
P
, T
DSS
DM
DM
DM
T
I
I
I
I
I
I
qJA
qJA
qJA
GS
AS
D
D
D
D
D
D
D
D
D
L
stg
−55 to
Value
−1.45
−2.97
−1.88
−3.85
−2.43
+150
"10
0.71
−2.3
−9.0
1.19
62.5
−16
175
105
−12
−15
350
260
2.0
1
°C/W
°C/W
°C/W
Unit
mJ
°C
°C
W
W
W
V
V
A
A
A
A
A
A
A
A
A
†For information on tape and reel specifications,
NTMD2P01R2
NTMD2P01R2G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D
8
*For additional marking information, refer to
SUFFIX NB
(Note: Microdot may be in either location)
CASE 751
STYLE 11
−16 V
Application Note AND8002/D.
Device
V
SOIC−8
DSS
1
ED2P01= Specific Device Code
A
Y
WW
G
ORDERING INFORMATION
G
http://onsemi.com
= Assembly Location
= Year
= Work Week
= Pb−Free Package
100 mW @ −4.5 V
R
AND PIN ASSIGNMENT
(Pb−Free)
DS(ON)
MARKING DIAGRAM*
Package
P−Channel
SOIC−8
SOIC−8
D
8
1
Publication Order Number:
D1 D1 D2 D2
S1 G1 S2 G2
Typ
S
AYWW G
ED2P01
G
2500/Tape & Reel
2500/Tape & Reel
NTMD2P01R2/D
Shipping
I
−2.3 A
D
Max
†
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NTMD2P01R2 Summary of contents
Page 1
... Application Note AND8002/D. ORDERING INFORMATION Device Package Shipping SOIC−8 2500/Tape & Reel SOIC−8 2500/Tape & Reel (Pb−Free) including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D Publication Order Number: NTMD2P01R2/D Max † ...
Page 2
ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage ( Vdc −250 mAdc Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (V = −16 Vdc Vdc 25° ...
Page 3
V = −2 − −4 −1 −2 −1 −1 ...
Page 4
1200 C iss 900 C rss 600 300 −V − GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 1000 V = ...
Page 5
D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse 0.01 1E−03 1E−02 1E−01 Figure 13. FET Thermal Response Normalized Steady State (1 inch pad) ∅ja 0.0125 W 0.0563 W 0.110 W 0.273 W 0.021 ...
Page 6
... STYLE 11: PIN 1. SOURCE 1 2. GATE 1 3. SOURCE 2 4. GATE 2 5. DRAIN 2 6. DRAIN 2 7. DRAIN 1 8. DRAIN 1 mm inches ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. NTMD2P01R2/D _ ...