NTMD2P01R2 ON Semiconductor, NTMD2P01R2 Datasheet - Page 4

• Manufacturer Part Number: NTMD2P01R2
• Description: MOSFET PWR P-CHAN DUAL 16V 8SOIC
• Manufacturer: ON Semiconductor

Specifications of NTMD2P01R2

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 100 mOhm @ 2.4A, 4.5V
• Drain To Source Voltage (vdss): 16V
• Current - Continuous Drain (id) @ 25° C: 2.3A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 750pF @ 16V
• Power - Max: 710mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: NTMD2P01R2OS

1500
1200
900
600
300
1000
100
1.6
1.2
0.8
0.4
0
10
10
2
0
0.4
1.0
V
I
V
Figure 9. Resistive Switching Time Variation
D
DD
GS
GATE−TO−SOURCE OR DRAIN−TO−SOURCE
C
C
−V
= −1.2 A
iss
rss
= −10 V
= −2.7 V
SD,
V
T
5
Figure 7. Capacitance Variation
GS
J
0.5
Figure 11. Diode Forward Voltage
= 25°C
SOURCE−TO−DRAIN VOLTAGE (VOLTS)
−V
R
= 0 V
G,
GS
versus Gate Resistance
V
GATE RESISTANCE (OHMS)
DS
VOLTAGE (VOLTS)
0
0.6
−V
versus Current
= 0 V
DS
10
5
0.7
t
V
t
d (on)
d (off)
GS
t
r
= 0 V
10
0.8
T
C
C
C
t
J
f
oss
rss
iss
15
= 25°C
0.9
http://onsemi.com
20
100
1
4
5
4
3
2
1
0
0
100
Drain−to−Source Voltage versus Total Charge
1.0
10
Q1
1.0
Figure 12. Diode Reverse Recovery Waveform
Figure 10. Resistive Switching Time Variation
V
I
V
2
D
I
DD
GS
S
= −2.4 A
Figure 8. Gate−to−Source and
Q
= −10 V
= −4.5 V
g
, TOTAL GATE CHARGE (nC)
Q2
4
t
R
p
V
G,
QT
versus Gate Resistance
DS
GATE RESISTANCE (OHMS)
6
di/dt
t
a
10
8
t
rr
V
t
b
GS
I
S
0.25 I
10
I
t
D
T
d (off)
(on)
S
J
t
= −2.4 A
t
d
= 25°C
r
12
t
f
14
TIME
20
18
16
14
12
10
8
6
4
2
0
100