NTMD2P01R2 ON Semiconductor, NTMD2P01R2 Datasheet - Page 3

• Manufacturer Part Number: NTMD2P01R2
• Description: MOSFET PWR P-CHAN DUAL 16V 8SOIC
• Manufacturer: ON Semiconductor

Specifications of NTMD2P01R2

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 100 mOhm @ 2.4A, 4.5V
• Drain To Source Voltage (vdss): 16V
• Current - Continuous Drain (id) @ 25° C: 2.3A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 750pF @ 16V
• Power - Max: 710mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: NTMD2P01R2OS

Final Product/Process Change Notification #16142
ELECTRICAL CHARACTERISTIC SUMMARY:
There is no change in electrical parametric performance. Characterization data is available
upon request.
CHANGED PART IDENTIFICATION:
SO8 Products assembled with the Copper Wire from the ON Semiconductor facility in
Carmona, Philippines will have a Finish Good Date Code representing Work Week 47, 2008
or newer.
Issue Date: 20-Aug-2008
Rev.14 Jun 2007
Page 3 of 4