2N7002TA Diodes Zetex, 2N7002TA Datasheet - Page 2

• Manufacturer Part Number: 2N7002TA
• Description: MOSFET N-CH 60V 115MA SOT23-3
• Manufacturer: Diodes Zetex
• Type: Small Signalr

Specifications of 2N7002TA

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 115mA
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Input Capacitance (ciss) @ Vds: 50pF @ 25V
• Power - Max: 330mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 7.5Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 115mA
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Power Dissipation: 300mW
• Continuous Drain Current: 115mA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 2N7002TR

Thermal Characteristics
Electrical Characteristics
Maximum Ratings
Drain-Source Voltage
Drain-Gate Voltage R
Gate-Source Voltage
Drain Current (Note 4)
Total Power Dissipation (Note 4)
Derating above T
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Diode Forward Voltage (Note 6)
Continuous Source Current (Note 6)
Pulse Source Current (Note 6)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Notes:
2N7002
Document number: DS11303 Rev. 24 - 2
4. Device mounted on FR-4 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our
5. Short duration pulse test used to minimize self-heating effect.
6. V
website at http://www.diodes.com/datasheets/ap02001.pdf.
SD
measured in 250μs pulse, duty cycle = 2%; I
A
= 25°C
GS
≤ 1.0MΩ
Characteristic
Characteristic
Characteristic
@T
A
= 25°C unless otherwise specified
@T
@T
Continuous @ 100°C
A
A
= 25°C unless otherwise specified
= 25°C unless otherwise specified
@ T
@ T
@ T
@ T
Continuous
Continuous
SD
C
J
C
J
= 125°C
= 125°C
= 25°C
= 25°C
measure in 10ms Repetitive Pulse, duty cycle = 2% , Pd_Pulse is from Zth test data
Pulsed
Pulsed
www.diodes.com
Symbol
R
2 of 5
BV
V
t
I
t
D(OFF)
DS (ON)
I
I
D(ON)
C
D(ON)
V
C
C
GS(th)
g
DSS
GSS
I
I
SD
FS
SD
oss
DSS
S
iss
rss
Symbol
Symbol
T
V
J,
V
V
R
P
DSS
DGR
GSS
I
T
θ JA
D
D
STG
Min
1.0
0.5
60
80
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
0.78
Typ
3.2
4.4
1.0
2.0
7.0
70
22
11
11
⎯
⎯
⎯
⎯
⎯
⎯
-55 to +150
Max
13.5
500
±10
200
1.0
2.5
7.5
5.0
1.5
50
25
20
20
⎯
⎯
⎯
Value
Value
2
±20
±40
115
800
300
417
2.4
60
60
73
Unit
mS
mA
µA
nA
pF
pF
pF
ns
ns
Ω
V
V
A
V
A
V
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
R
R
GS
DS
GS
DS
GS
GS
GS
DS
GS
DS
DD
L
GEN
= 150Ω, V
Test Condition
= 60V, V
= V
=10V, I
= 30V, I
= 0V, I
= ±20V, V
= 5.0V, I
= 10V, I
= 10V, V
= 0V, I
= 25V, V
= 25Ω
GS
© Diodes Incorporated
mW/°C
November 2010
Units
Units
°C/W
mW
mA
, I
°C
2N7002
D
S
⎯
⎯
V
V
V
D
D
D
D
= 115mA
= 10μA
D
GS
DS
GS
GEN
= 0.2A
= 250μA
= 0.5A
= 0.2A,
DS
= 0.05A
= 0V
= 7.5V
= 0V
= 0V
= 10V,