2N7002TA Diodes Zetex, 2N7002TA Datasheet - Page 3

• Manufacturer Part Number: 2N7002TA
• Description: MOSFET N-CH 60V 115MA SOT23-3
• Manufacturer: Diodes Zetex
• Type: Small Signalr

Specifications of 2N7002TA

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 115mA
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Input Capacitance (ciss) @ Vds: 50pF @ 25V
• Power - Max: 330mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 7.5Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 115mA
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Power Dissipation: 300mW
• Continuous Drain Current: 115mA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 2N7002TR

2N7002
Document number: DS11303 Rev. 24 - 2
10
1.0
0.8
0.6
0.4
0.2
2.5
1.5
1.0
9
4
0
3.0
2.0
8
7
6
5
3
2
1
0
0
-55
0
Fig. 3 On-Resistance vs. Junction Temperature
Fig. 5 Typical Transfer Characteristics
-30
V , DRAIN-SOURCE VOLTAGE (V)
0.2
T , JUNCTION TEMPERATURE ( C)
DS
Fig. 1 On-Region Characteristics
1
j
I , DRAIN CURRENT (A)
-5
D
0.4
20
2
45
0.6
3
70
V
I = 200mA
95
D
0.8
GS
4
= 10V,
°
120
1
5
145
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300
250
200
100
400
350
150
50
Fig. 6 Max Power Dissipation vs. Ambient Temperature
0
7
6
5
4
3
2
0
6
5
4
3
2
1
0
1
0
0
0
Fig. 4 On-Resistance vs. Gate-Source Voltage
25
I = 50mA
2
Fig. 2 On-Resistance vs. Drain Current
D
V
T , AMBIENT TEMPERATURE ( C)
GS
A
0.2
, GATE TO SOURCE VOLTAGE (V)
50
4
I , DRAIN CURRENT (A)
D
6
75
I = 500mA
0.4
D
8
100 125
10
0.6
12
150
14
0.8
°
175
© Diodes Incorporated
November 2010
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2N7002
200
1.0
18