SI1300BDL-T1-E3 Vishay, SI1300BDL-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI1300BDL-T1-E3
• Description: MOSFET N-CH 20V 400MA SOT323-3
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1300BDL-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 850 mOhm @ 250mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 400mA
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 0.84nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 35pF @ 10V
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-3, SOT-323-3
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.85 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 0.37 A
• Power Dissipation: 190 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 320mA
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 1.08ohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: 1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI1300BDL-T1-E3TR

Document Number: 73557
S–52388—Rev. A, 21–Nov–05
1.25
1.00
0.75
0.50
0.25
0.00
2.0
1.5
1.0
0.5
0.0
5
4
3
2
1
0
0.00
0.0
0
I
D
= 0.4 A
0.5
On-Resistance vs. Drain Current
0.25
V
Q
DS
150
g
Output Characteristics
– Total Gate Charge (nC)
– Drain-to-Source Voltage (V)
I
1.0
V
D
V
Q
GS
GS
– Drain Current (A)
0.50
g
–Gate Charge
= 4.5 V
= 2.5 V
V
DS
300
1.5
= 10 V
V
GS
0.75
V
V
= 10 V thru 2.5 V
V
GS
GS
GS
2.0
= 1.5 V
= 1.0 V
= 2.0 V
V
DS
450
= 16 V
1.00
2.5
_
1.25
600
3.0
New Product
1.6
1.4
1.2
1.0
0.8
0.6
0.8
0.6
0.4
0.2
0.0
50
40
30
20
10
0
–50
0.0
0
Transfer Characteristics curves vs. Temp
On-Resistance vs. Junction Temperature
I
T
D
–25
A
= 0.25 A
= 125 _C
0.5
V
4
V
GS
T
T
DS
J
0
A
– Junction Temperature (_C)
= 25 _C
C
– Gate-to-Source Voltage (V)
– Drain-Source Voltage (V)
rss
Capacitance
25
1.0
8
Vishay Siliconix
C
50
C
oss
iss
Si1300BDL
T
1.5
12
A
75
= –55 _C
100
www.vishay.com
2.0
16
125
150
2.5
20
3