SI1300BDL-T1-E3 Vishay, SI1300BDL-T1-E3 Datasheet - Page 3
![MOSFET N-CH 20V 400MA SOT323-3](/photos/5/45/54567/pkg_5549_sml.jpg)
SI1300BDL-T1-E3
Manufacturer Part Number
SI1300BDL-T1-E3
Description
MOSFET N-CH 20V 400MA SOT323-3
Manufacturer
Vishay
Series
TrenchFET®r
Specifications of SI1300BDL-T1-E3
Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
850 mOhm @ 250mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
400mA
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
0.84nC @ 4.5V
Input Capacitance (ciss) @ Vds
35pF @ 10V
Power - Max
200mW
Mounting Type
Surface Mount
Package / Case
SC-70-3, SOT-323-3
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.85 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
0.37 A
Power Dissipation
190 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
320mA
Drain Source Voltage Vds
20V
On Resistance Rds(on)
1.08ohm
Rds(on) Test Voltage Vgs
8V
Threshold Voltage Vgs Typ
1V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI1300BDL-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI1300BDL-T1-E3
Manufacturer:
Cortina
Quantity:
186
Part Number:
SI1300BDL-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Document Number: 73557
S–52388—Rev. A, 21–Nov–05
1.25
1.00
0.75
0.50
0.25
0.00
2.0
1.5
1.0
0.5
0.0
5
4
3
2
1
0
0.00
0.0
0
I
D
= 0.4 A
0.5
On-Resistance vs. Drain Current
0.25
V
Q
DS
150
g
Output Characteristics
– Total Gate Charge (nC)
– Drain-to-Source Voltage (V)
I
1.0
V
D
V
Q
GS
GS
– Drain Current (A)
0.50
g
–Gate Charge
= 4.5 V
= 2.5 V
V
DS
300
1.5
= 10 V
V
GS
0.75
V
V
= 10 V thru 2.5 V
V
GS
GS
GS
2.0
= 1.5 V
= 1.0 V
= 2.0 V
V
DS
450
= 16 V
1.00
2.5
_
1.25
600
3.0
New Product
1.6
1.4
1.2
1.0
0.8
0.6
0.8
0.6
0.4
0.2
0.0
50
40
30
20
10
0
–50
0.0
0
Transfer Characteristics curves vs. Temp
On-Resistance vs. Junction Temperature
I
T
D
–25
A
= 0.25 A
= 125 _C
0.5
V
4
V
GS
T
T
DS
J
0
A
– Junction Temperature (_C)
= 25 _C
C
– Gate-to-Source Voltage (V)
– Drain-Source Voltage (V)
rss
Capacitance
25
1.0
8
Vishay Siliconix
C
50
C
oss
iss
Si1300BDL
T
1.5
12
A
75
= –55 _C
100
www.vishay.com
2.0
16
125
150
2.5
20
3