SI1300BDL-T1-E3 Vishay, SI1300BDL-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI1300BDL-T1-E3
• Description: MOSFET N-CH 20V 400MA SOT323-3
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1300BDL-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 850 mOhm @ 250mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 400mA
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 0.84nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 35pF @ 10V
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-3, SOT-323-3
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.85 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 0.37 A
• Power Dissipation: 190 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 320mA
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 1.08ohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: 1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI1300BDL-T1-E3TR

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations.
http://www.vishay.com/ppg?73557.
Document Number: 73557
S–52388—Rev. A, 21–Nov–05
*The power dissipation P
cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
0.01
0.01
0.1
0.1
1
1
10
10
–4
–4
0.05
Duty Cycle = 0.5
0.05
0.02
Duty Cycle = 0.5
0.1
0.2
0.2
0.1
0.02
D
is based on T
Single Pulse
10
–3
Single Pulse
10
J(max)
–3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
= 150 _C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for
10
–2
_
Square Wave Pulse Duration (sec)
Square Wave Pulse Duration (sec)
10
New Product
For related documents such as package/tape drawings, part marking, and reliability data, see
–2
10
–1
10
1
–1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
– T
t
1
A
1
= P
t
2
DM
Vishay Siliconix
Z
thJA
thJA
100
t
t
1
2
(t)
Si1300BDL
= 360 _C/W
1000
www.vishay.com
10
5