SI1300BDL-T1-E3 Vishay, SI1300BDL-T1-E3 Datasheet - Page 5
![MOSFET N-CH 20V 400MA SOT323-3](/photos/5/45/54567/pkg_5549_sml.jpg)
SI1300BDL-T1-E3
Manufacturer Part Number
SI1300BDL-T1-E3
Description
MOSFET N-CH 20V 400MA SOT323-3
Manufacturer
Vishay
Series
TrenchFET®r
Specifications of SI1300BDL-T1-E3
Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
850 mOhm @ 250mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
400mA
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
0.84nC @ 4.5V
Input Capacitance (ciss) @ Vds
35pF @ 10V
Power - Max
200mW
Mounting Type
Surface Mount
Package / Case
SC-70-3, SOT-323-3
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.85 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
0.37 A
Power Dissipation
190 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
320mA
Drain Source Voltage Vds
20V
On Resistance Rds(on)
1.08ohm
Rds(on) Test Voltage Vgs
8V
Threshold Voltage Vgs Typ
1V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI1300BDL-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI1300BDL-T1-E3
Manufacturer:
Cortina
Quantity:
186
Part Number:
SI1300BDL-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations.
http://www.vishay.com/ppg?73557.
Document Number: 73557
S–52388—Rev. A, 21–Nov–05
*The power dissipation P
cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
0.01
0.01
0.1
0.1
1
1
10
10
–4
–4
0.05
Duty Cycle = 0.5
0.05
0.02
Duty Cycle = 0.5
0.1
0.2
0.2
0.1
0.02
D
is based on T
Single Pulse
10
–3
Single Pulse
10
J(max)
–3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
= 150 _C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for
10
–2
_
Square Wave Pulse Duration (sec)
Square Wave Pulse Duration (sec)
10
New Product
For related documents such as package/tape drawings, part marking, and reliability data, see
–2
10
–1
10
1
–1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
– T
t
1
A
1
= P
t
2
DM
Vishay Siliconix
Z
thJA
thJA
100
t
t
1
2
(t)
Si1300BDL
= 360 _C/W
1000
www.vishay.com
10
5