DMG3415U-7 Diodes Inc, DMG3415U-7 Datasheet - Page 2

• Manufacturer Part Number: DMG3415U-7
• Description: MOSFET P-CH 20V 4A SOT-23
• Manufacturer: Diodes Inc

Specifications of DMG3415U-7

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 39 mOhm @ 4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 9.1nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 294pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0425 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 4 A
• Power Dissipation: 900 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DMG3415UDITR

Electrical Characteristics
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistnace
SWITCHING CHARACTERISTICS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
DMG3415U
Document number: DS31735 Rev. 4 - 2
20
16
12
8
4
0
5. Short duration pulse test used to minimize self-heating effect.
0
Characteristic
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 1 Typical Output Characteristic
1
V
GS
V
V
V
GS
GS
GS
= 2.5V
2
= 3.0V
= 4.5V
= 3.5V
@T
T
3
J
A
= 25°C
= 25°C unless otherwise specified
V
V
GS
GS
= 2.0V
= 1.5V
4
Symbol
R
BV
V
DS (ON)
t
t
I
I
C
|Y
C
GS(th)
C
Q
Q
D(on)
D(off)
DSS
GSS
Q
R
oss
t
t
rss
DSS
iss
gd
fs
gs
r
f
g
g
|
5
www.diodes.com
Min
-0.3
2 of 6
-20
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-0.55
Typ
294
104
250
117
795
393
9.1
1.5
1.7
⎯
⎯
⎯
31
40
51
25
71
3
20
16
12
8
4
0
0.5
V
T = 125°C
Max
42.5
-1.0
±10
-1.0
DS
A
⎯
53
71
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
V
Fig. 2 Typical Transfer Characteristic
= 5V
GS
T = 150°C
A
, GATE-SOURCE VOLTAGE (V)
1
Unit
mΩ
μA
μA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
Ω
V
V
S
T = -55°C
A
T = 25°C
1.5
A
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
V
V
R
GS
DS
GS
DS
GS
GS
GS
DS
DS
DS
GS
DS
D
T = 85°C
= 2.5Ω, R
A
= -20V, V
= V
= -5V, I
= -10V, V
= 0V, V
= -10V, V
= 0V, I
= ±8V, V
= -4.5V, I
= -2.5V, I
= -1.8V, I
= -4.5V, V
GS
Test Condition
, I
D
D
GS
D
= -250μA
2
G
DS
D
D
D
= -4A
GS
GS
GS
= -250μA
DS
DMG3415U
= 0V, f = 1.0MHz
= 3.0Ω, I
= -4.0A
= -3.5A
= -2.0A
= 0V
= -4.5V,
= 0V
= 0V
= -10V, I
© Diodes Incorporated
D
2.5
= -1A
July 2009
D
= -4A