DMG3415U-7 Diodes Inc, DMG3415U-7 Datasheet - Page 5

• Manufacturer Part Number: DMG3415U-7
• Description: MOSFET P-CH 20V 4A SOT-23
• Manufacturer: Diodes Inc

Specifications of DMG3415U-7

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 39 mOhm @ 4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 9.1nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 294pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0425 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 4 A
• Power Dissipation: 900 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DMG3415UDITR

Package Outline Dimensions
Suggested Pad Layout
DMG3415U
Document number: DS31735 Rev. 4 - 2
K
J
F
Z
G
A
H
D
Y
B C
K1
X
L
E
M
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C
Dimensions Value (in mm)
Dim
K1
M
A
B
C
D
G
H
K
F
J
L
α
All Dimensions in mm
X
Y
C
E
Z
0.013
0.903
0.085
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.45
Min
0°
-
SOT-23
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
0.18
8°
-
1.35
2.9
0.8
0.9
2.0
0.915
0.535
0.400
0.40
1.30
2.40
1.83
2.90
0.05
1.00
0.55
0.11
Typ
-
DMG3415U
© Diodes Incorporated
July 2009