SI1307EDL-T1-E3 Vishay, SI1307EDL-T1-E3 Datasheet - Page 2

• Manufacturer Part Number: SI1307EDL-T1-E3
• Description: MOSFET P-CH 12V 850MA SOT323-3
• Manufacturer: Vishay

Specifications of SI1307EDL-T1-E3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 290 mOhm @ 1A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 850mA
• Vgs(th) (max) @ Id: 450mV @ 250µA
• Gate Charge (qg) @ Vgs: 5nC @ 4.5V
• Power - Max: 290mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-3, SOT-323-3
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.29 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 0.85 A
• Power Dissipation: 290 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 910mA
• Drain Source Voltage Vds: -12V
• On Resistance Rds(on): 580mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: -45V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI1307EDL-T1-E3TR

Si1307DL
Vishay Siliconix
Notes
a.
b.
www.siliconix.com FaxBack 408-970-5600
2
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
D i S
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
8
6
4
2
0
0
b
O S
Parameter
V
1
a
a
R
V
DS
GS
i
a
– Drain-to-Source Voltage (V)
= 4.5 V
300 s, duty cycle
2
a
a
3
1 V
2%.
Symbol
V
r
I
DS(on)
t
t
I
I
I
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
DSS
g
Q
t
4 V
SD
t
t
rr
4
fs
gs
gd
r
f
g
3.5 V
2.5 V
1.5 V
3 V
2 V
5
New Product
V
V
I
I
V
D
DS
DS
= –6 V, V
= –9.6 V, V
V
I
V
V
–1 A, V
V
V
F
V
V
1 A V
DS
DS
GS
GS
V
DS
GS
V
V
= –1 A, di/dt = 100 A/ s
6 V V
Test Condition
I
DS
S
DS
DD
DD
= –5 V, V
= –2.5 V, I
= –1.8 V, I
= V
= –1 A, V
= –9.6 V, V
= –4.5 V, I
= 0 V, V
= –5 V, I
= –6 V, R
GEN
GS
GS
6 V R
GS
, I
= –4.5 V, R
= –4.5 V, I
D
,
GS
GS
= 0 V, T
GS
= –250 A
D
D
D
4 5 V R
4 5 V I
L
L
GS
D
= –4.5 V
= –0.5 A
= –0.3 A
= –1 A
=
= 0 V
= 6
= –1 A
= 0 V
6
4.5 V
J
D
= 70 C
G
6
5
4
3
2
1
0
= –1 A
= 6
0
6
1 A
0.5
V
GS
1.0
Min
–045
–3
– Gate-to-Source Voltage (V)
1.5
T
25 C
C
2.0
0.240
0.350
0.480
Typ
1000
0.69
0.61
= –55 C
210
450
910
540
3.5
3.2
Pending—Rev. A, 10-Nov-99
Document Number: 71096
2.5
Max
0.290
0.435
0.580
1550
1600
–1.2
340
720
860
3.0
125 C
–1
–5
5
1
3.5
Unit
nC
ns
V
A
S
V
A
A
A
C
4.0