SI1307EDL-T1-E3 Vishay, SI1307EDL-T1-E3 Datasheet - Page 4
![MOSFET P-CH 12V 850MA SOT323-3](/photos/5/45/54567/pkg_5549_sml.jpg)
SI1307EDL-T1-E3
Manufacturer Part Number
SI1307EDL-T1-E3
Description
MOSFET P-CH 12V 850MA SOT323-3
Manufacturer
Vishay
Datasheet
1.SI1307EDL-T1-E3.pdf
(6 pages)
Specifications of SI1307EDL-T1-E3
Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
290 mOhm @ 1A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
850mA
Vgs(th) (max) @ Id
450mV @ 250µA
Gate Charge (qg) @ Vgs
5nC @ 4.5V
Power - Max
290mW
Mounting Type
Surface Mount
Package / Case
SC-70-3, SOT-323-3
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.29 Ohm @ 4.5 V
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
0.85 A
Power Dissipation
290 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
910mA
Drain Source Voltage Vds
-12V
On Resistance Rds(on)
580mohm
Rds(on) Test Voltage Vgs
8V
Threshold Voltage Vgs Typ
-45V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI1307EDL-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI1307EDL-T1-E3
Manufacturer:
TI
Quantity:
117
Part Number:
SI1307EDL-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si1307DL
Vishay Siliconix
www.siliconix.com FaxBack 408-970-5600
4
–0.1
–0.2
400
300
200
100
0.4
0.3
0.2
0.1
0.0
0.01
0
0.1
–50
0
2
1
10
–4
–25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
V
I
GSS
GS
2
0
– Gate-to-Source Voltage (v)
( A) @ T = 25 C
T
J
– Temperature ( C)
25
10
–3
I
D
50
4
= 250 A
Single Pulse
75
10
100
6
–2
125
Square Wave Pulse Duration (sec)
150
8
New Product
10
–1
0.0001
1
0.001
1000
0.01
100
0.1
10
20
16
12
1
8
4
0
10
0.1
–3
Gate-Source Voltage vs. Gate-Current
10
I
G
I
V
G
–2
( A) @ 150 C
GS
10
( A) @ 25 C
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
– Gate-to-Source Voltage (v)
Single Pulse Power
DM
JM
10
– T
–1
t
A
Time (sec)
1
= P
t
2
DM
T
A
1
Z
1
= 25 C
thJA
thJA
100
Pending—Rev. A, 10-Nov-99
t
t
1
2
(t)
Document Number: 71096
= 360 C/W
10
600
100
600
8