DMG4468LK3-13 Diodes Inc, DMG4468LK3-13 Datasheet - Page 4

• Manufacturer Part Number: DMG4468LK3-13
• Description: MOSFET N-CH 30V 9.7A TO252
• Manufacturer: Diodes Inc

Specifications of DMG4468LK3-13

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 16 mOhm @ 11.6A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 9.7A
• Vgs(th) (max) @ Id: 1.95V @ 250µA
• Gate Charge (qg) @ Vgs: 18.85nC @ 10V
• Input Capacitance (ciss) @ Vds: 867pF @ 15V
• Power - Max: 1.68W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 11 mOhms
• Gate Charge Qg: 18.85 nC
• Forward Transconductance Gfs (max / Min): 8 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 9.7 A
• Power Dissipation: 1.68 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DMG4468LK3-13DITR

DMG4468LK3
Document number: DS31958 Rev. 2 - 2
1,000
100
20
18
16
14
12
10
10
8
6
4
2
0
0.2
1
2
Fig. 11 Gate-Source Leakage Current vs. Voltage
Fig. 9 Diode Forward Voltage vs. Current
0.001
4
T = 85°C
V , SOURCE-DRAIN VOLTAGE (V)
0.01
A
0.1
SD
0.00001
0.4
V
1
GS
6
, GATE SOURCE VOLTAGE(V)
D = 0.7
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
T = 125°C
A
8
0.6
0.0001
T = -55°C
A
10
T = 25°C
A
12
0.8
T = 150°C
A
14
T = 25°C
0.001
A
1.0
16
18
Fig. 13 Transient Thermal Response
t , PULSE DURATION TIME (s)
0.01
1
1.2
20
www.diodes.com
D = 0.9
4 of 6
0.1
100
1,000
0.0001 0.001 0.01
90
80
70
60
50
40
30
20
10
100
0
10
1
Fig. 12 Single Pulse Maximum Power Dissipation
2
1
Fig. 10 Gate-Source Leakage Current vs. Voltage
T = 85°C
A
4
V
t , PULSE DURATION TIME (s)
P(pk)
GS
1
6
, GATE SOURCE VOLTAGE(V)
Duty Cycle, D = t /t
10
T = 125°C
T - T = P * R
R
J
A
θ JA
R
θ
JA
t
(t) = r(t) *
A
8
1
T = -55°C
t
2
= 76°C/W
A
0.1
10
θ
R
JA
100
1 2
θ
JA
(t)
1
T = 150°C
12
A
T - T = P * R
R
J
T = 25°C
θ
R
A
JA
14
Single Pulse
θ
10
JA
(t) = R
A
DMG4468LK3
1,000
= 77°C/W
16
θ
JA
100
θ
* r(t)
JA
© Diodes Incorporated
(t)
18
October 2009
1,000
20