SI7403BDN-T1-E3 Vishay, SI7403BDN-T1-E3 Datasheet - Page 7

• Manufacturer Part Number: SI7403BDN-T1-E3
• Description: MOSFET P-CH 20V 8A 1212-8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI7403BDN-T1-E3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 74 mOhm @ 5.1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 8V
• Input Capacitance (ciss) @ Vds: 430pF @ 10V
• Power - Max: 9.6W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® 1212-8
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -8A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 110mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: -770mV
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.074 Ohms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 5.1 A
• Power Dissipation: 3.1 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI7403BDN-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73333.
Document Number: 73333
S-83051-Rev. B, 29-Dec-08
0.01
0.01
0.1
0.1
2
1
1
10 -
10 -
4
4
Duty Cycle = 0.5
0.1
Single Pulse
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.2
Single Pulse
0.02
10 -
0.05
3
Normalized Thermal Transient Impedance, Junction-to-Ambient
10 -
Normalized Thermal Transient Impedance, Junction-to-Case
3
10 -
2
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10 -
1
10 -
2
1
10
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
-1
DM
JM
-
T
t
A
1
= P
t
2
Vishay Siliconix
DM
Z
Si7403BDN
thJA
thJA
100
t
t
1
2
(t)
= 65 °C/W
www.vishay.com
600
1
7