SI4346DY-T1-E3 Vishay, SI4346DY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4346DY-T1-E3
• Description: MOSFET N-CH 30V 5.9A 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4346DY-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 23 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5.9A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 4.5V
• Power - Max: 1.31W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.023 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 5.9 A
• Power Dissipation: 1310 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 8A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 36mohm
• Rds(on) Test Voltage Vgs: 12V
• Threshold Voltage Vgs Typ: 2V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4346DY-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72958
S09-0392-Rev. E, 09-Mar-09
0.040
0.035
0.030
0.025
0.020
0.015
0.010
0.005
0.000
0.1
40
10
1
6
5
4
3
2
1
0
0.0
0
0
V
I
D
Source-Drain Diode Forward Voltage
DS
1
= 8 A
On-Resistance vs. Drain Current
5
= 15 V
0.3
V
V
SD
T
2
GS
J
Q
= 150 °C
g
-
= 4.5 V
I
10
D
-
Source-to-Drain Voltage (V)
3
-
Total Gate Charge (nC)
Gate Charge
0.6
Drain Current (A)
4
15
5
0.9
20
T
6
V
J
GS
= 25 °C
= 10 V
1.2
7
25
8
1.5
30
9
1200
1000
0.05
0.04
0.03
0.02
0.01
0.00
800
600
400
200
1.6
1.4
1.2
1.0
0.8
0.6
0
0
- 50
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
V
I
D
- 25
rss
GS
= 8 A
5
= 10 V
2
V
V
T
DS
GS
0
J
-
10
- Gate-to-Source Voltage (V)
-
Junction Temperature (°C)
Drain-to-Source Voltage (V)
C
Capacitance
25
4
oss
I
D
C
15
= 8 A
50
iss
Vishay Siliconix
6
75
Si4346DY
20
www.vishay.com
100
8
25
125
10
30
150
3