SI4346DY-E3 VISHAY [Vishay Siliconix], SI4346DY-E3 Datasheet

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SI4346DY-E3

Manufacturer Part Number
SI4346DY-E3
Description
N-Channel 30-V (D-S) MOSFET
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet
Notes
a.
Document Number: 72958
S-41793—Rev. B, 04-Oct-04
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
i
DS
30
30
(V)
J
Ordering Information: Si4346DY—E3
ti
t A bi
0.025 @ V
0.030 @ V
0.036 @ V
0.023 @ V
G
S
S
S
r
DS(on)
J
J
a
a
1
2
3
4
= 150_C)
= 150_C)
t
a
a
GS
GS
GS
GS
Parameter
Parameter
(W)
= 4.5 V
= 3.0 V
= 2.5 V
= 10 V
Top View
SO-8
Si4346DY-T1—E3 ( with Tape and Reel)
a
a
N-Channel 30-V (D-S) MOSFET
a
I
D
8
7
6
5
7.5
6.8
6.0
8
(A)
D
D
D
D
A
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
Q
T
T
T
T
t v 10 sec
A
A
A
A
g
New Product
= 25_C
= 70_C
= 25_C
= 70_C
6 5
6.5
(Typ)
Symbol
Symbol
T
R
R
R
V
V
J
I
P
P
, T
DM
I
I
I
thJA
thJF
DS
GS
D
D
S
D
D
stg
FEATURES
D TrenchFETr Gen II Power MOSFET
D 100% R
APPLICATIONS
D High-Side DC/DC Conversion
D Notebook Logic DC/DC, Low-Side
− Notebook
− Desktop
− Server
10 secs
Typical
G
6.5
2.2
2.5
1.6
43
74
22
N-Channel MOSFET
8
g
Tested
−55 to 150
D
S
"12
30
30
Steady State
Maximum
Vishay Siliconix
1.20
1.31
0.84
5.9
4.7
50
95
27
Si4346DY
www.vishay.com
Unit
Unit
_C/W
C/W
_C
W
W
V
V
A
A
1

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SI4346DY-E3 Summary of contents

Page 1

... Top View Ordering Information: Si4346DY—E3 Si4346DY-T1—E3 ( with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current Continuous Source Current (Diode Conduction) ...

Page 2

... Si4346DY Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain-Source On-State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic ...

Page 3

... Source-to-Drain Voltage (V) SD Document Number: 72958 S-41793—Rev. B, 04-Oct-04 New Product 1200 1000 25_C J 1.2 1.5 Si4346DY Vishay Siliconix Capacitance C iss 800 600 400 C oss 200 C rss − Drain-to-Source Voltage (V) DS On-Resistance vs ...

Page 4

... Si4346DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0 250 mA D −0.0 −0.2 −0.4 −0.6 −0.8 −50 − − Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − www.vishay.com 4 New Product ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72958. Document Number: 72958 S-41793—Rev. B, 04-Oct-04 New Product −2 − Square Wave Pulse Duration (sec) Si4346DY Vishay Siliconix 1 10 www.vishay.com 5 ...

Page 6

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description ...

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