SI4346DY-E3 VISHAY [Vishay Siliconix], SI4346DY-E3 Datasheet - Page 2

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SI4346DY-E3

Manufacturer Part Number
SI4346DY-E3
Description
N-Channel 30-V (D-S) MOSFET
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet
Notes
a.
b.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Si4346DY
Vishay Siliconix
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
30
25
20
15
10
5
0
0
b
Parameter
1
V
a
a
V
DS
GS
Output Characteristics
a
− Drain-to-Source Voltage (V)
= 10 thru 3 V
2
a
a
J
= 25_C UNLESS OTHERWISE NOTED)
3
Symbol
V
r
r
I
DS(on)
DS(on)
t
t
I
I
I
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
DSS
Q
g
R
t
t
SD
t
rr
fs
gs
gd
r
f
g
g
4
2 V
5
New Product
V
V
I
D
DS
DS
DS
^ 1 A, V
I
F
V
= 15 V, V
= 30 V, V
V
V
V
V
V
V
V
V
DS
= 2.2 A, di/dt = 100 A/ms
V
GS
I
DS
DS
V
Test Condition
GS
GS
S
DS
DD
DD
GS
DS
= 2.2 A, V
= 0 V, V
= 2.5 V, I
= V
w 5 V, V
= 3.0 V, I
= 4.5 V, I
= 30 V, V
= 15 V, R
= 15 V, R
= 10 V, I
= 15 V, I
GEN
GS
GS
GS
GS
, I
= 10 V, R
GS
= 0 V, T
= 4.5 V, I
D
GS
GS
D
GS
D
D
= 250 mA
L
L
D
D
= "12 V
= 7.5 A
= 6.8 A
= 8 A
= 15 W
= 15 W
= 6.0 A
= 10 V
= 0 V
= 8 A
= 0 V
J
30
25
20
15
10
g
g
D
D
5
0
= 55_C
= 6 W
0.0
= 8 A
0.5
V
GS
Transfer Characteristics
− Gate-to-Source Voltage (V)
T
1.0
Min
0.25
C
0.7
25_C
20
= 125_C
1.5
0.019
0.021
0.023
0.027
Typ
0.75
6.5
2.3
1.1
0.5
32
40
20
11
9
7
S-41793—Rev. B, 04-Oct-04
Document Number: 72958
2.0
−55_C
"100
0.036
Max
0.023
0.025
0.030
0.75
2.0
1.1
10
15
17
60
11
35
1
5
2.5
Unit
nA
mA
mA
nC
ns
W
W
W
V
A
S
V
3.0

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