SI4346DY-E3 VISHAY [Vishay Siliconix], SI4346DY-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4346DY-E3
• Description: N-Channel 30-V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

Document Number: 72958
S-41793—Rev. B, 04-Oct-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.040
0.035
0.030
0.025
0.020
0.015
0.010
0.005
0.000
0.1
40
10
6
5
4
3
2
1
0
1
0.0
0
0
V
I
D
DS
1
Source-Drain Diode Forward Voltage
= 8 A
On-Resistance vs. Drain Current
= 15 V
5
0.3
V
V
2
SD
T
GS
Q
J
g
= 150_C
= 4.5 V
− Source-to-Drain Voltage (V)
I
10
D
− Total Gate Charge (nC)
3
− Drain Current (A)
Gate Charge
0.6
4
15
5
0.9
20
6
V
T
J
GS
= 25_C
= 10 V
7
1.2
25
8
1.5
30
9
New Product
1200
1000
0.05
0.04
0.03
0.02
0.01
0.00
800
600
400
200
1.6
1.4
1.2
1.0
0.8
0.6
0
−50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
−25
C
D
GS
rss
= 8 A
5
= 10 V
2
T
V
V
0
J
DS
GS
− Junction Temperature (_C)
− Gate-to-Source Voltage (V)
10
− Drain-to-Source Voltage (V)
25
Capacitance
C
4
oss
I
Vishay Siliconix
D
C
50
15
= 8 A
iss
6
75
20
Si4346DY
100
www.vishay.com
8
25
125
150
10
30
3