ZVN4525GTA Diodes Zetex, ZVN4525GTA Datasheet - Page 2

• Manufacturer Part Number: ZVN4525GTA
• Description: MOSFET N-CH 250V 310MA SOT223
• Manufacturer: Diodes Zetex

Specifications of ZVN4525GTA

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.5 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 310mA
• Vgs(th) (max) @ Id: 1.8V @ 1mA
• Gate Charge (qg) @ Vgs: 3.65nC @ 10V
• Input Capacitance (ciss) @ Vds: 72pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZVN4525GTR

ABSOLUTE MAXIMUM RATINGS.
THERMAL RESISTANCE
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
NB High Voltage Applications
For high voltage applications, the appropriate industry sector guidelines should be considered with regard to
voltage spacing between conductors.
ZVN4525G
PARAMETER
Drain-Source Voltage
Gate Source Voltage
Continuous Drain Current (V
Pulsed Drain Current (c)
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Power Dissipation at T
Linear Derating Factor
Operating and Storage Temperature Range
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
A
=25°C (a)
(V
GS
GS
=10V; TA=25°C)(a)
=10V; TA=70°C)(a)
SYMBOL
R
R
2
SYMBOL
V
V
I
I
I
I
I
P
T
D
D
DM
S
SM
JA
JA
D
j
DSS
GS
:
T
stg
-55 to +150
VALUE
LIMIT
63
26
1.44
1.44
250
310
248
1.1
16
40
2
ISSUE 1 - MARCH 2001
mW/°C
UNIT
°C/W
°C/W
UNIT
mA
mA
W
°C
A
A
A
V
V