ZVN4525GTA Diodes Zetex, ZVN4525GTA Datasheet - Page 4

• Manufacturer Part Number: ZVN4525GTA
• Description: MOSFET N-CH 250V 310MA SOT223
• Manufacturer: Diodes Zetex

Specifications of ZVN4525GTA

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.5 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 310mA
• Vgs(th) (max) @ Id: 1.8V @ 1mA
• Gate Charge (qg) @ Vgs: 3.65nC @ 10V
• Input Capacitance (ciss) @ Vds: 72pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZVN4525GTR

ELECTRICAL CHARACTERISTICS (at T
(1) Measured under pulsed conditions. Width=300 s. Duty cycle 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZVN4525G
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance (1)
Forward Transconductance (3)
DYNAMIC (3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
SYMBOL MIN.
V
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
fs
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
SD
g
gs
gd
rr
4
250
0.8
0.3
amb
= 25°C unless otherwise stated).
TYP.
285
35
±1
1.4
5.6
5.9
6.4
0.475
72
11
3.6
1.25
1.70
11.40
3.50
2.6
0.2
0.5
186
34
MAX.
500
±100
1.8
8.5
9.0
9.5
3.65
0.28
0.70
0.97
260
48
UNI
T
V
nA
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
ISSUE 1 - MARCH 2001
CONDITIONS.
I
V
I
V
V
V
V
V
f=1MHz
V
R
(refer to test circuit)
V
I
test circuit)
T
V
T
di/dt= 100A/ s
D
V
D
D
j
j
DS
GS
GS
GS
DS
DS
DD
G
DS
GS
=1mA, V
=1mA, V
=360mA(refer to
=25°C, I
=25°C, I
GS
=50 , V
=250V, V
=10V, I
=4.5V, I
=2.4V, I
=10V,I
=25 V, V
=25V,V
=0V
=30V, I
= 40V, V
S
F
D
GS
DS
GS
=360mA,
D
GS
=360mA,
=0.3A
D
D
D
=500mA
GS
=360mA
=360mA
=20mA
= V
=0V
GS
=10V,
DS
=10V
=0V,
=0V
=0V
GS