SI4866BDY-T1-GE3 Vishay, SI4866BDY-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI4866BDY-T1-GE3
• Description: MOSFET N-CH 12V 21.5A 8-SOIC
• Manufacturer: Vishay

Specifications of SI4866BDY-T1-GE3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.3 mOhm @ 12A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 21.5A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 80nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 5020pF @ 6V
• Power - Max: 4.45W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.0053 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 16.1 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 21.5A
• Drain Source Voltage Vds: 12V
• On Resistance Rds(on): 7.4mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: 1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4866BDY-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 70341
S09-0540-Rev. B, 06-Apr-09
0.0065
0.0060
0.0055
0.0050
0.0045
0.0040
4.5
3.6
2.7
1.8
0.9
0.0
50
40
30
20
10
On-Resistance vs. Drain Current and Gate Voltage
0
0.0
0
0
I
D
= 10 A
10
11
0.5
V
DS
Output Characteristics
Q
g
V
- Drain-to-Source Voltage (V)
V
V
- Total Gate Charge (nC)
I
DS
GS
D
GS
Gate Charge
- Drain Current (A)
20
= 6 V
22
1.0
= 1.8 V
= 2.5 V
V
DS
V
= 4 V
GS
= 4.5 V
30
33
1.5
V
DS
1 V
1.5 V
= 8 V
40
44
2.0
50
55
2.5
7000
5600
4200
2800
1400
2.0
1.6
1.2
0.8
0.4
0.0
1.5
1.3
1.1
0.9
0.7
0
- 50
0.0
0
I
D
On-Resistance vs. Junction Temperature
= 12 A
- 25
2
0.3
V
V
C
GS
Transfer Characteristics
DS
T
0
rss
J
T
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
C
4
= 125 °C
25
Capacitance
0.6
V
C
GS
iss
25 °C
= 1.8 V
50
6
Vishay Siliconix
C
0.9
oss
Si4866BDY
75
8
100
www.vishay.com
- 55 °C
V
1.2
GS
10
= 4.5 V
125
1.5
150
12
3