SI4866BDY-T1-GE3 Vishay, SI4866BDY-T1-GE3 Datasheet - Page 3
![MOSFET N-CH 12V 21.5A 8-SOIC](/photos/5/42/54248/pkg_5498_sml.jpg)
SI4866BDY-T1-GE3
Manufacturer Part Number
SI4866BDY-T1-GE3
Description
MOSFET N-CH 12V 21.5A 8-SOIC
Manufacturer
Vishay
Datasheet
1.SI4866BDY-T1-GE3.pdf
(7 pages)
Specifications of SI4866BDY-T1-GE3
Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5.3 mOhm @ 12A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
21.5A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
80nC @ 4.5V
Input Capacitance (ciss) @ Vds
5020pF @ 6V
Power - Max
4.45W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.0053 Ohm @ 4.5 V
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
16.1 A
Power Dissipation
2500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
21.5A
Drain Source Voltage Vds
12V
On Resistance Rds(on)
7.4mohm
Rds(on) Test Voltage Vgs
8V
Threshold Voltage Vgs Typ
1V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4866BDY-T1-GE3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4866BDY-T1-GE3
Manufacturer:
VISHAY
Quantity:
2 500
Company:
Part Number:
SI4866BDY-T1-GE3
Manufacturer:
Freescale
Quantity:
255
Part Number:
SI4866BDY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 70341
S09-0540-Rev. B, 06-Apr-09
0.0065
0.0060
0.0055
0.0050
0.0045
0.0040
4.5
3.6
2.7
1.8
0.9
0.0
50
40
30
20
10
On-Resistance vs. Drain Current and Gate Voltage
0
0.0
0
0
I
D
= 10 A
10
11
0.5
V
DS
Output Characteristics
Q
g
V
- Drain-to-Source Voltage (V)
V
V
- Total Gate Charge (nC)
I
DS
GS
D
GS
Gate Charge
- Drain Current (A)
20
= 6 V
22
1.0
= 1.8 V
= 2.5 V
V
DS
V
= 4 V
GS
= 4.5 V
30
33
1.5
V
DS
1 V
1.5 V
= 8 V
40
44
2.0
50
55
2.5
7000
5600
4200
2800
1400
2.0
1.6
1.2
0.8
0.4
0.0
1.5
1.3
1.1
0.9
0.7
0
- 50
0.0
0
I
D
On-Resistance vs. Junction Temperature
= 12 A
- 25
2
0.3
V
V
C
GS
Transfer Characteristics
DS
T
0
rss
J
T
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
C
4
= 125 °C
25
Capacitance
0.6
V
C
GS
iss
25 °C
= 1.8 V
50
6
Vishay Siliconix
C
0.9
oss
Si4866BDY
75
8
100
www.vishay.com
- 55 °C
V
1.2
GS
10
= 4.5 V
125
1.5
150
12
3