SI4866BDY-T1-GE3 Vishay, SI4866BDY-T1-GE3 Datasheet - Page 6

• Manufacturer Part Number: SI4866BDY-T1-GE3
• Description: MOSFET N-CH 12V 21.5A 8-SOIC
• Manufacturer: Vishay

Specifications of SI4866BDY-T1-GE3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.3 mOhm @ 12A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 21.5A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 80nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 5020pF @ 6V
• Power - Max: 4.45W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.0053 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 16.1 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 21.5A
• Drain Source Voltage Vds: 12V
• On Resistance Rds(on): 7.4mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: 1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4866BDY-T1-GE3TR

Si4866BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com
6
0.01
0.01
0.1
0.1
1
1
www.vishay.com/ppg?70341.
10
10
-4
-4
0.05
0.2
0.1
0.02
Duty Cycle = 0.5
0.02
0.05
0.2
0.1
Duty Cycle = 0.5
Single Pulse
Single Pulse
10
-3
10
Normalized Thermal Transient Impedance, Junction-to-Ambient
-3
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-2
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-2
10
-1
1
10
-1
1
0
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
– T
t
1
A
1
S09-0540-Rev. B, 06-Apr-09
= P
t
2
Document Number: 70341
DM
100
Z
thJA
thJA
t
t
1
2
(t)
= 90 °C/W
1000
1
0