SIB419DK-T1-GE3 Vishay, SIB419DK-T1-GE3 Datasheet

MOSFET P-CH 12V 9A SC75-6

SIB419DK-T1-GE3

Manufacturer Part Number
SIB419DK-T1-GE3
Description
MOSFET P-CH 12V 9A SC75-6
Manufacturer
Vishay
Datasheet

Specifications of SIB419DK-T1-GE3

Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
60 mOhm @ 5.2A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
9A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
11.82nC @ 5V
Input Capacitance (ciss) @ Vds
562pF @ 6V
Power - Max
13.1W
Mounting Type
Surface Mount
Package / Case
PowerPAK® SC-75-6L
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain
Resistance Drain-source Rds (on)
0.06 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
11 S
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
5.2 A
Power Dissipation
2450 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-9A
Drain Source Voltage Vds
-12V
On Resistance Rds(on)
114mohm
Rds(on) Test Voltage Vgs
8V
Threshold Voltage Vgs Typ
-1V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SIB419DK-T1-GE3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SIB419DK-T1-GE3
Manufacturer:
VISHAY
Quantity:
12 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. See Solder Profile (
d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Maximum under Steady State conditions is 105 °C/W.
f. Based on T
g. Package Limited.
Document Number: 70440
S-82286-Rev. D, 22-Sep-08
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
DS
- 12
(V)
1.60 mm
6
PowerPAK SC-75-6L-Single
D
C
5
= 25 °C.
0.060 at V
0.082 at V
0.114 at V
D
4
S
h
R
ttp://www.vishay.com/ppg?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed
DS(on)
D
1
S
GS
GS
GS
D
1.60 mm
(Ω)
= - 4.5 V
= - 2.5 V
= - 1.8 V
J
2
= 150 °C)
a, e
G
3
P-Channel 12-V (D-S) MOSFET
I
Ordering Information: SiB419DK-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
(A)
- 9
- 9
- 2
f, g
c, d
Part # code
A
= 25 °C, unless otherwise noted
Q
7.15 nC
Steady State
g
T
T
T
T
T
T
T
T
T
T
(Typ.)
C
C
A
A
C
A
C
C
A
A
New Product
t ≤ 5 s
Marking Code
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
B F X
X X X
FEATURES
APPLICATIONS
• Halogen-free
• TrenchFET
• New Thermally Enhanced PowerPAK
• Load Switch, PA Switch and Battery Switch for Portable
Lot Traceability
and Date code
Symbol
Symbol
T
R
R
SC-75 Package
- Small Footprint Area
Devices
J
V
V
I
P
, T
DM
I
I
thJC
thJA
GS
DS
D
S
D
stg
®
Power MOSFET
Typical
7.5
41
- 55 to 150
- 5.2
- 4.2
- 2.0
2.45
1.6
- 10.9
Limit
13.1
- 12
- 15
260
± 8
8.4
- 9
- 9
a, b
a, b
a, b
a, b
a, b
Maximum
9.5
51
Vishay Siliconix
G
P-Channel MOSFET
SiB419DK
®
www.vishay.com
S
D
°C/W
Unit
Unit
°C
W
V
A
RoHS
COMPLIANT
1

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SIB419DK-T1-GE3 Summary of contents

Page 1

... SC-75 Package - Small Footprint Area - 2 APPLICATIONS • Load Switch, PA Switch and Battery Switch for Portable Devices Marking Code Part # code Lot Traceability and Date code Ordering Information: SiB419DK-T1-GE3 (Lead (Pb)-free and Halogen-free °C, unless otherwise noted A Symbol ° °C C ...

Page 2

... SiB419DK Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... 1 0.0 1.8 2.4 3.0 1000 800 600 400 = 2.5 V 200 1.5 1 0.9 0.6 0 SiB419DK Vishay Siliconix ° 125 ° °C J 0.0 0.4 0.8 1.2 1.6 2 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss Drain-to-Source Voltage (V) DS Capacitance ...

Page 4

... SiB419DK Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 °C J 0.1 0. °C J 0.001 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Soure-Drain Diode Forward Voltage 1.0 0 250 µA D 0.8 0.7 0.6 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.18 0.15 0.12 0.09 ...

Page 5

... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 70440 S-82286-Rev. D, 22-Sep-08 New Product 16 12 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper SiB419DK Vishay Siliconix 100 125 T - Case Temperature (° ...

Page 6

... SiB419DK Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.05 0.1 0.02 Single Pulse 0 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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