SIB419DK-T1-GE3 Vishay, SIB419DK-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SIB419DK-T1-GE3
• Description: MOSFET P-CH 12V 9A SC75-6
• Manufacturer: Vishay

Specifications of SIB419DK-T1-GE3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 60 mOhm @ 5.2A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 11.82nC @ 5V
• Input Capacitance (ciss) @ Vds: 562pF @ 6V
• Power - Max: 13.1W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SC-75-6L
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain
• Resistance Drain-source Rds (on): 0.06 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 11 S
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 5.2 A
• Power Dissipation: 2450 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -9A
• Drain Source Voltage Vds: -12V
• On Resistance Rds(on): 114mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: -1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SIB419DK-T1-GE3TR

SiB419DK
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
0.01
0.1
1.0
0.9
0.8
0.7
0.6
0.5
10
1
0.0
- 50
Soure-Drain Diode Forward Voltage
- 25
0.2
T
J
V
= 150 °C
SD
0
- Source-to-Drain Voltage (V)
0.4
Threshold Voltage
T
J
25
- Temperature (°C)
I
D
0.6
T
= 250 µA
50
J
= 25 °C
75
0.8
0.001
0.01
100
0.1
10
100
1
0.1
1.0
* V
*Limited by
Safe Operating Area, Junction-to-Ambient
125
GS
1.2
V
minimum V
150
New Product
DS
R
Single Pulse
- Drain-to-Source Voltage (V)
T
DS(on)
BVDSS Limited
A
1
= 25 C
GS
at which R
I
DM
DS(on)
10
Limited
0.18
0.15
0.12
0.09
0.06
0.03
0.00
10 ms
100 ms
1 s
10 s
DC
20
15
10
5
0
0.001
is specified
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.01
100
1
V
GS
- Gate-to-Source Voltage (V)
0.1
T
A
2
= 25 °C
Pulse (s)
1
S-82286-Rev. D, 22-Sep-08
Document Number: 70440
3
10
I
T
D
A
= 5.2 A
= 125 °C
4
100
1000
5