SIA415DJ-T1-GE3 Vishay, SIA415DJ-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SIA415DJ-T1-GE3
• Description: MOSFET P-CH 20V 12A SC70-6
• Manufacturer: Vishay

Specifications of SIA415DJ-T1-GE3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 35 mOhm @ 5.6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 47nC @ 10V
• Input Capacitance (ciss) @ Vds: 1250pF @ 10V
• Power - Max: 19W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SC-70-6
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Dual Source
• Resistance Drain-source Rds (on): 0.035 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 20 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 8.4 A
• Power Dissipation: 3500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -12A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 51mohm
• Rds(on) Test Voltage Vgs: 12V
• Threshold Voltage Vgs Typ: -1.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SIA415DJ-T1-GE3TR

SiA415DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
100
10
- 50
1
0
- 25
Soure-Drain Diode Forward Voltage
0.2
V
0
SD
- Source-to-Drain Voltage (V)
Threshold Voltage
T
I
T
D
J
0.4
J
25
= 150 °C
= 250 µA
- Temperature (°C)
50
0.6
75
0.8
100
0.01
100
T
0.1
10
J
1
0.1
= 25 °C
1.0
125
Safe Operating Area, Junction-to-Ambient
Limited by R
* V
Single Pulse
T
GS
A
= 25 °C
150
> minimum V
1.2
New Product
V
DS
DS(on)
- Drain-to-Source Voltage (V)
1
*
BVDSS Limited
GS
at which R
DS(on)
10
0.10
0.08
0.06
0.04
0.02
0.00
30
25
20
15
10
5
0
0.001
is specified
1
1 ms
10 ms
1 s
10 s
100 µs
100 ms
DC
I
On-Resistance vs. Gate-to-Source Voltage
D
Single Pulse Power, Junction-to-Ambient
= 5.6 A
0.01
100
V
GS
2
- Gate-to-Source Voltage (V)
0.1
Time (s)
1
3
S-80435-Rev. B, 03-Mar-08
Document Number: 69512
10
4
100
125 °C
25 °C
1000
5