SIA415DJ-T1-GE3 Vishay, SIA415DJ-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SIA415DJ-T1-GE3
• Description: MOSFET P-CH 20V 12A SC70-6
• Manufacturer: Vishay

Specifications of SIA415DJ-T1-GE3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 35 mOhm @ 5.6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 47nC @ 10V
• Input Capacitance (ciss) @ Vds: 1250pF @ 10V
• Power - Max: 19W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SC-70-6
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Dual Source
• Resistance Drain-source Rds (on): 0.035 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 20 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 8.4 A
• Power Dissipation: 3500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -12A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 51mohm
• Rds(on) Test Voltage Vgs: 12V
• Threshold Voltage Vgs Typ: -1.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SIA415DJ-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 69512
S-80435-Rev. B, 03-Mar-08
25
20
15
10
5
0
0
Package Limited
25
D
T
C
is based on T
Current Derating*
50
- Case Temperature (°C)
75
J(max)
100
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
125
New Product
150
20
15
10
5
0
25
50
T
C
- Case Temperature (°C)
Power Derating
75
Vishay Siliconix
100
SiA415DJ
www.vishay.com
125
150
5