SIB417EDK-T1-GE3 Vishay, SIB417EDK-T1-GE3 Datasheet
SIB417EDK-T1-GE3
Specifications of SIB417EDK-T1-GE3
Related parts for SIB417EDK-T1-GE3
SIB417EDK-T1-GE3 Summary of contents
Page 1
... R • Typical ESD Protection 900 V • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch for Portable Devices Marking Code Part # code Lot Traceability and Date code Ordering Information: SiB417EDK-T1-GE3 (Lead (Pb)-free and Halogen-free °C, unless otherwise noted A Symbol ° ° ...
Page 2
... SiB417EDK Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...
Page 3
... Q - Total Gate Charge (nC) g Gate Charge Document Number: 68699 S09-1500-Rev. B, 10-Aug- 1 1000 800 600 400 200 6 SiB417EDK Vishay Siliconix 2.0 1.6 1 ° 125 ° °C C 0.0 0.0 0.5 1.0 1 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss Drain-to-Source Voltage (V) ...
Page 4
... SiB417EDK Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 150 ° 0.1 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Soure-Drain Diode Forward Voltage 5000 4000 3000 2000 1000 Gate-to-Source Voltage (V) GS Gate Source Voltage vs. Gate Current 0.7 0 250 µA D 0.5 0.4 ...
Page 5
... The power dissipation P junction-to-case thermal resistance, and is more useful in settling the 100 125 150 upper dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit. SiB417EDK Vishay Siliconix 100 µ 100 ...
Page 6
... SiB417EDK Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...
Page 7
... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...