SIB417EDK-T1-GE3 Vishay, SIB417EDK-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SIB417EDK-T1-GE3
• Description: MOSFET P-CH 8V 9A SC75-6
• Manufacturer: Vishay

Specifications of SIB417EDK-T1-GE3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 58 mOhm @ 5.8A, 4.5V
• Drain To Source Voltage (vdss): 8V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 5V
• Input Capacitance (ciss) @ Vds: 565pF @ 4V
• Power - Max: 13W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SC-75-6L
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.058 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 11 S
• Drain-source Breakdown Voltage: 8 V
• Gate-source Breakdown Voltage: +/- 5 V
• Continuous Drain Current: 5.8 A
• Power Dissipation: 2400 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -9A
• Drain Source Voltage Vds: -8V
• On Resistance Rds(on): 222mohm
• Rds(on) Test Voltage Vgs: 5V
• Threshold Voltage Vgs Typ: -1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SIB417EDK-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 68699
S09-1500-Rev. B, 10-Aug-09
0.4
0.3
0.2
0.1
0.0
15
12
On-Resistance vs. Drain Current and Gate Voltage
9
6
3
0
5
4
3
2
1
0
0
0
0
V
GS
I
D
= 5.8 A
= 1.2 V
1
3
V
DS
Output Characteristics
2
V
Q
V
GS
- Drain-to-Source Voltage (V)
GS
g
V
- Total Gate Charge (nC)
I
GS
D
= 5 V thru 2.5 V
= 4.5 V
Gate Charge
V
- Drain Current (A)
2
= 1.5 V
6
DS
= 4 V
4
3
9
V
V
V
DS
GS
V
GS
V
V
GS
6
GS
= 6.4 V
GS
= 1.8 V
= 1.5 V
12
4
= 2.5 V
= 1 V
= 2 V
15
5
8
1000
800
600
400
200
1.4
1.2
1.0
0.8
0.6
2.0
1.6
1.2
0.8
0.4
0.0
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
- 25
T
V
V
C
T
0.5
GS
DS
T
Transfer Characteristics
2
0
= 125 °C
C
J
= 25 °C
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
V
C
GS
C
C
25
iss
Capacitance
oss
rss
= - 4.5 V, I
1.0
50
4
Vishay Siliconix
V
SiB417EDK
GS
T
D
C
75
= - 5.8 A
= - 2.5 V, I
= - 55 °C
www.vishay.com
100
1.5
6
D
125
= - 5 A
150
2.0
8
3