SI7463DP-T1-GE3 Vishay, SI7463DP-T1-GE3 Datasheet

MOSFET P-CH 40V 11A PPAK 8SOIC

SI7463DP-T1-GE3

Manufacturer Part Number
SI7463DP-T1-GE3
Description
MOSFET P-CH 40V 11A PPAK 8SOIC
Manufacturer
Vishay
Datasheet

Specifications of SI7463DP-T1-GE3

Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
9.2 mOhm @ 18.6A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
140nC @ 10V
Power - Max
1.9W
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.0092 Ohm @ 10 V
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
11 A
Power Dissipation
1900 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-18.6A
Drain Source Voltage Vds
-40V
On Resistance Rds(on)
14mohm
Rds(on) Test Voltage Vgs
-4.5V
Threshold Voltage Vgs Typ
-3V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI7463DP-T1-GE3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7463DP-T1-GE3
Manufacturer:
VISHAY
Quantity:
12 000
Part Number:
SI7463DP-T1-GE3
Manufacturer:
Vishay/Siliconix
Quantity:
48 040
Part Number:
SI7463DP-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI7463DP-T1-GE3
0
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72440
S09-1928-Rev. F, 28-Sep-09
Ordering Information: Si7463DP-T1-E3 (Lead (Pb)-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
V
DS
- 40
(V)
8
6.15 mm
D
7
0.0092 at V
0.014 at V
D
Si7463DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
6
D
R
PowerP AK SO-8
DS(on)
Bottom View
5
J
a
D
GS
= 150 °C)
a
GS
= - 4.5 V
(Ω)
= - 10 V
1
P-Channel 40-V (D-S) MOSFET
S
a
2
S
3
S
a
5.15 mm
4
b,c
G
A
- 18.6
I
D
- 15
= 25 °C, unless otherwise noted
(A)
Steady State
Steady State
T
T
T
T
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• New Low Thermal Resistance PowerPAK
• Compliant to RoHS Directive 2002/95/EC
Symbol
Symbol
T
R
R
Definition
Package with Low 1.07 mm Profile
J
V
V
I
P
, T
DM
thJA
thJC
I
I
DS
GS
D
S
D
stg
®
Power MOSFETs
Typical
- 18.6
G
10 s
- 4.5
- 15
5.4
3.4
1.0
18
52
P-Channel MOSFET
- 55 to 150
± 20
- 40
- 60
260
S
D
Steady State
Maximum
- 8.9
- 1.6
- 11
1.9
1.2
1.3
23
65
Vishay Siliconix
Si7463DP
®
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

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SI7463DP-T1-GE3 Summary of contents

Page 1

... S 6. Bottom View Ordering Information: Si7463DP-T1-E3 (Lead (Pb)-free) Si7463DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si7463DP Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

Page 3

... 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72440 S09-1928-Rev. F, 28-Sep- 100 125 °C J 0.8 1.0 1.2 Si7463DP Vishay Siliconix 8000 7000 6000 C iss 5000 4000 3000 2000 C oss 1000 C rss Drain-to-Source Voltage (V) DS Capacitance 1 ...

Page 4

... Si7463DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.8 0.6 0.4 0.2 0.0 0.2 0 emperature (°C) J Threshold Voltage Limited Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 250 µ 100 125 150 ...

Page 5

... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72440. Document Number: 72440 S09-1928-Rev. F, 28-Sep- Square Wave Pulse Duration (s) Si7463DP Vishay Siliconix - www.vishay.com 5 ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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