SI7463DP-T1-GE3 Vishay, SI7463DP-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI7463DP-T1-GE3
• Description: MOSFET P-CH 40V 11A PPAK 8SOIC
• Manufacturer: Vishay

Specifications of SI7463DP-T1-GE3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9.2 mOhm @ 18.6A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 140nC @ 10V
• Power - Max: 1.9W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SO-8
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.0092 Ohm @ 10 V
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 1900 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -18.6A
• Drain Source Voltage Vds: -40V
• On Resistance Rds(on): 14mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI7463DP-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72440
S09-1928-Rev. F, 28-Sep-09
0.016
0.014
0.012
0.010
0.008
0.006
0.004
0.002
0.000
100
10
10
8
6
4
2
0
1
0.0
0
0
V
I
D
DS
= 18.6 A
Source-Drain Diode Forward Voltage
0.2
1 0
= 15 V
On-Resistance vs. Drain Current
25
V
SD
Q
g
- Source-to-Drain Voltage (V)
T
0.4
2 0
- Total Gate Charge (nC)
I
D
J
Gate Charge
= 150 °C
- Drain Current (A)
50
0.6
V
3 0
GS
= 4.5 V
75
0.8
4 0
V
GS
T
J
= 10 V
100
= 25 °C
1.0
5 0
125
1.2
60
8000
7000
6000
5000
4000
3000
2000
1000
0.04
0.03
0.02
0.01
0.00
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
C
On-Resistance vs. Junction Temperature
V
I
rss
D
- 25
GS
= 18.6 A
I
D
= 10 V
2
8
= 5 A
V
V
DS
T
GS
0
C
J
oss
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
2 5
Capacitance
I
16
D
4
= 18.6 A
C
5 0
Vishay Siliconix
iss
24
6
7 5
Si7463DP
100
www.vishay.com
32
8
125
150
10
40
3