IRF820ASPBF Vishay, IRF820ASPBF Datasheet
![MOSFET N-CH 500V 2.5A D2PAK](/photos/5/29/52982/vishay-d2pak_sml.jpg)
IRF820ASPBF
Specifications of IRF820ASPBF
Related parts for IRF820ASPBF
IRF820ASPBF Summary of contents
Page 1
... SMPS MOSFET HEXFET V DSS 500V 2 D Pak IRF820AS @ 10V 10V 150 300 (1.6mm from case ) 10 lbf•in (1.1N•m) ® Power MOSFET R (on) max 3.0Ω 2.5A TO-262 IRF820AL Max. Units 2.5 1 0.4 W/°C ± 3.4 V/ns °C www.vishay.com 1 ...
Page 2
... Intrinsic turn-on time is negligible (turn-on is dominated by L Conditions = 250µ 1mA 1.5A 250µ 0V 125° Conditions = 1.5A D = 1.0V, ƒ = 1.0MHz DS = 400V, ƒ = 1.0MHz 400V DS Max. Units 140 mJ 2.5 A 5.0 mJ Max. Units 2.5 °C/W 62 Conditions 2.5A 2. www.vishay.com 2 ...
Page 3
... Fig 4. Normalized On-Resistance VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 4.5V 20µs PULSE WIDTH T = 150 C ° Drain-to-Source Voltage ( 10V 100 120 140 160 ° Junction Temperature ( C) J Vs. Temperature www.vishay.com 100 3 ...
Page 4
... Fig 8. Maximum Safe Operating Area 2. 400V 250V 100V DS FOR TEST CIRCUIT SEE FIGURE Total Gate Charge (nC) G Gate-to-Source Voltage OPERATION IN THIS AREA LIMITED BY R DS(on) 10us 100us 1ms ° 10ms ° = 150 C 100 1000 V , Drain-to-Source Voltage (V) DS www.vishay.com 16 10000 4 ...
Page 5
... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91058 Fig 10a. Switching Time Test Circuit V DS 90% 125 150 ° 10 d(on) Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0.001 0. Rectangular Pulse Duration (sec ≤ 1 ≤ 0 d(off thJC C 0.1 1 www.vishay.com 5 ...
Page 6
... Starting T , Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy 700 650 600 550 + V DS 0.0 - Fig 12d. Typical Drain-to-Source Voltage I D TOP 1.1A 1.6A BOTTOM 2. 100 125 ° J Vs. Drain Current 0.5 1.0 1.5 2.0 2 Avalanche Current ( A) Vs. Avalanche Current www.vishay.com 150 6 ...
Page 7
... Voltage Inductor Curent Fig 14. For N-Channel HEXFET Document Number: 91058 + • • • - • • • • P.W. Period D = Period Body Diode Forward Current di/dt Diode Recovery dv/dt Body Diode Forward Drop Ripple ≤ 5% ® power MOSFETs + - V =10V www.vishay.com 7 ...
Page 8
... Dimensions are shown in millimeters (inches "L " N ote: "P " bly lin tion in dicates "L ead-F r ee" Document Number: 91058 IGN www.vishay.com 8 ...
Page 9
... Note: "P" embly line pos ition indicates "L ead-F ree" OR Document Number: 91058 INT ER NAT IONAL LOGO DAT E CODE 1997 CODE L INE C PAR INT E R NAT IONAL LOGO DAT E CODE IGNAT EAD ODU CT (OPT IONAL ) L OT CODE 1997 CODE PAR www.vishay.com 9 ...
Page 10
... Data and specifications subject to change without notice. 0.368 (.0145) 0.342 (.0135) 24.30 (.957) 15.42 (.609) 23.90 (.941) 15.22 (.601) 4.72 (.136) 4.52 (.178) 27.40 (1.079) 23.90 (.941) 4 60.00 (2.362) MIN. 30.40 (1.197) MAX. 26.40 (1.039) 4 24.40 (.961) 3 DSS TAC Fax: (310) 252-7903 07/04 www.vishay.com 10 ...
Page 11
... Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. ...