IRF820ASPBF Vishay, IRF820ASPBF Datasheet

MOSFET N-CH 500V 2.5A D2PAK

IRF820ASPBF

Manufacturer Part Number
IRF820ASPBF
Description
MOSFET N-CH 500V 2.5A D2PAK
Manufacturer
Vishay
Datasheet

Specifications of IRF820ASPBF

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3 Ohm @ 1.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
2.5A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
17nC @ 10V
Input Capacitance (ciss) @ Vds
340pF @ 25V
Power - Max
50W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
3 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
2.5 A
Power Dissipation
50000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
2.5A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
3ohm
Rds(on) Test Voltage Vgs
10V
Leaded Process Compatible
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRF820ASPBF
Document Number: 91058
l
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l
l
l
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l
l
I
I
I
P
V
dv/dt
T
T
D
D
DM
J
STG
D
GS
@ T
@ T
Drive Requirement
dv/dt Ruggedness
Avalanche Voltage and Current
@T
Low Gate Charge Qg Results in Simple
Improved Gate, Avalanche and Dynamic
Fully Characterized Capacitance and
Effective C
Switch Mode Power Supply (SMPS)
Uninterruptable Power Supply
High speed power switching
Lead-Free
Two Transistor Forward
Half Bridge and Full Bridge
C
C
C

= 25°C
= 100°C
= 25°C
through … are on page 8
OSS
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current †
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt Ġ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
specified (
Parameter
SMPS MOSFET
GS
GS
@ 10V†
@ 10V†
V
500V
DSS
300 (1.6mm from case )
IRF820AS
D
HEXFET
10 lbf•in (1.1N•m)
2
Pak
-55 to + 150
R
Max.
DS
± 30
2.5
1.6
0.4
3.4
10
50
(on) max
3.0Ω
®
Power MOSFET
IRF820AL
TO-262
www.vishay.com
Units
W/°C
V/ns
2.5A
°C
W
A
V
I
D
1

Related parts for IRF820ASPBF

IRF820ASPBF Summary of contents

Page 1

... SMPS MOSFET HEXFET V DSS 500V 2 D Pak IRF820AS @ 10V† 10V† 150 300 (1.6mm from case ) 10 lbf•in (1.1N•m) ® Power MOSFET R (on) max 3.0Ω 2.5A TO-262 IRF820AL Max. Units 2.5 1 0.4 W/°C ± 3.4 V/ns °C www.vishay.com 1 ...

Page 2

... Intrinsic turn-on time is negligible (turn-on is dominated by L Conditions = 250µ 1mA † 1.5A „ 250µ 0V 125° Conditions = 1.5A† D „† = 1.0V, ƒ = 1.0MHz DS = 400V, ƒ = 1.0MHz 400V …† DS Max. Units 140 mJ 2.5 A 5.0 mJ Max. Units 2.5 °C/W 62 Conditions 2.5A „ 2. www.vishay.com 2 ...

Page 3

... Fig 4. Normalized On-Resistance VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 4.5V 20µs PULSE WIDTH T = 150 C ° Drain-to-Source Voltage ( 10V 100 120 140 160 ° Junction Temperature ( C) J Vs. Temperature www.vishay.com 100 3 ...

Page 4

... Fig 8. Maximum Safe Operating Area 2. 400V 250V 100V DS FOR TEST CIRCUIT SEE FIGURE Total Gate Charge (nC) G Gate-to-Source Voltage OPERATION IN THIS AREA LIMITED BY R DS(on) 10us 100us 1ms ° 10ms ° = 150 C 100 1000 V , Drain-to-Source Voltage (V) DS www.vishay.com 16 10000 4 ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91058 Fig 10a. Switching Time Test Circuit V DS 90% 125 150 ° 10 d(on) Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0.001 0. Rectangular Pulse Duration (sec ≤ 1 ≤ 0 d(off thJC C 0.1 1 www.vishay.com 5 ...

Page 6

... Starting T , Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy 700 650 600 550 + V DS 0.0 - Fig 12d. Typical Drain-to-Source Voltage I D TOP 1.1A 1.6A BOTTOM 2. 100 125 ° J Vs. Drain Current 0.5 1.0 1.5 2.0 2 Avalanche Current ( A) Vs. Avalanche Current www.vishay.com 150 6 ...

Page 7

... Voltage Inductor Curent Fig 14. For N-Channel HEXFET Document Number: 91058 + • • ƒ • - „ • • • • P.W. Period D = Period Body Diode Forward Current di/dt Diode Recovery dv/dt Body Diode Forward Drop Ripple ≤ 5% ® power MOSFETs + - V =10V www.vishay.com 7 ...

Page 8

... Dimensions are shown in millimeters (inches "L " N ote: "P " bly lin tion in dicates "L ead-F r ee" Document Number: 91058 IGN www.vishay.com 8 ...

Page 9

... Note: "P" embly line pos ition indicates "L ead-F ree" OR Document Number: 91058 INT ER NAT IONAL LOGO DAT E CODE 1997 CODE L INE C PAR INT E R NAT IONAL LOGO DAT E CODE IGNAT EAD ODU CT (OPT IONAL ) L OT CODE 1997 CODE PAR www.vishay.com 9 ...

Page 10

... Data and specifications subject to change without notice. 0.368 (.0145) 0.342 (.0135) 24.30 (.957) 15.42 (.609) 23.90 (.941) 15.22 (.601) 4.72 (.136) 4.52 (.178) 27.40 (1.079) 23.90 (.941) 4 60.00 (2.362) MIN. 30.40 (1.197) MAX. 26.40 (1.039) 4 24.40 (.961) 3 DSS TAC Fax: (310) 252-7903 07/04 www.vishay.com 10 ...

Page 11

... Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. ...

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