IRLL014 Vishay, IRLL014 Datasheet - Page 4

• Manufacturer Part Number: IRLL014
• Description: MOSFET N-CH 60V 2.7A SOT223
• Manufacturer: Vishay

Specifications of IRLL014

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 200 mOhm @ 1.6A, 5V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 2.7A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 8.4nC @ 5V
• Input Capacitance (ciss) @ Vds: 400pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.2 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 2.7 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRLL014

IRLL014, SiHLL014
Vishay Siliconix
www.vishay.com
4
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
400
300
700
600
500
200
100
10
0
6
6
4
2
0
10
0
0
I
D
= 10 A
V
DS ,
2
Q
G
Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
V
DS
4
= 30 V
V
V
C
C
C
DS
GS
iss
rss
oss
= 48 V
= C
= 0 V, f = 1 MHz
= C
= C
10
gs
gd
6
ds
1
+ C
C
+ C
iss
C
gd
rss
gd
For test circuit
see figure 13
C
, C
oss
8
ds
Shorted
10
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
10
0.1
10
10
10
1
-1
5
2
5
2
5
2
5
2
2
1
0.4
0
0.1
Fig. 8 - Maximum Safe Operating Area
Operation in this area limited by R
2
V
V
0.8
SD
5
DS
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
T
1
J
= 25 °C
2
1.2
T
T
Single Pulse
C
J
= 150 °C
= 25 °C
5
10
1.6
S10-1257-Rev. C, 31-May-10
2
Document Number: 91319
5
100
1
10
T
10
DS(on)
J
ms
2.0
V
2
= 150 °C
ms
GS
µs
2
= 0 V
5
10
2.4
3