IRLL014 Vishay, IRLL014 Datasheet - Page 6

MOSFET N-CH 60V 2.7A SOT223

IRLL014

Manufacturer Part Number
IRLL014
Description
MOSFET N-CH 60V 2.7A SOT223
Manufacturer
Vishay
Datasheet

Specifications of IRLL014

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
200 mOhm @ 1.6A, 5V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
2.7A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
8.4nC @ 5V
Input Capacitance (ciss) @ Vds
400pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Configuration
Single Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.2 Ohms
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 10 V
Continuous Drain Current
2.7 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRLL014

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IRLL014, SiHLL014
Vishay Siliconix
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6
Vary t
required I
p
Fig. 12a - Unclamped Inductive Test Circuit
to obtain
V
Fig. 13a - Basic Gate Charge Waveform
AS
GS
V
G
R
10 V
g
Q
GS
V
DS
t
p
Charge
Q
Q
GD
G
I
AS
D.U.T
0.01 Ω
L
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
150
250
200
100
50
0
25
V
Starting T
DD
= 25 V
+
-
50
V
DD
J
, Junction Temperature (°C)
75
100
Top
Bottom
125
Fig. 12b - Unclamped Inductive Waveforms
V
I
AS
12 V
DS
1.2 A
1.7 A
2.7 A
Fig. 13b - Gate Charge Test Circuit
V
I
D
GS
Same type as D.U.T.
150
Current regulator
0.2 µF
Current sampling resistors
3 mA
50 kΩ
0.3 µF
t
p
I
G
S10-1257-Rev. C, 31-May-10
Document Number: 91319
D.U.T.
V
I
D
DS
+
-
V
V
DD
DS

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