IRFR9020 Vishay, IRFR9020 Datasheet

MOSFET P-CH 50V 9.9A DPAK

IRFR9020

Manufacturer Part Number
IRFR9020
Description
MOSFET P-CH 50V 9.9A DPAK
Manufacturer
Vishay
Datasheet

Specifications of IRFR9020

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
280 mOhm @ 5.7A, 10V
Drain To Source Voltage (vdss)
50V
Current - Continuous Drain (id) @ 25° C
9.9A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
14nC @ 10V
Input Capacitance (ciss) @ Vds
490pF @ 25V
Power - Max
42W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.28 Ohms
Drain-source Breakdown Voltage
- 50 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
9.9 A
Power Dissipation
42 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFR9020
Note
a. See device orientation.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 90350
S09-0074-Rev. A, 02-Feb-09
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
(TO-252)
D
DS
DS(on)
g
gs
gd
DPAK
(Max.) (nC)
(nC)
(nC)
(V)
(Ω)
G
S
D
(TO-251)
IPAK
a
G
D S
DPAK (TO-252)
IRFR9020PbF
SiHFR9020-E3
IRFR9020
SiHFR9020
a
a
V
b
GS
= - 10 V
G
Single
P-Channel MOSFET
- 50
IRFR9020, IRFU9020, SiHFR9020, SiHFU9020
6.5
6.5
14
C
S
D
Power MOSFET
V
= 25 °C, unless otherwise noted
0.28
GS
DPAK (TO-252)
IRFR9020TRPbF
SiHFR9020T-E3
IRFR9020TR
SiHFR9020T
at - 10 V
T
T
a
a
C
C
= 100 °C
= 25 °C
FEATURES
• Surface Mountable (Order As IRFR9020, SiHFR9020)
• Straight Lead Option (Order As IRFU9020, SiHFU9020)
• Repetitive Avalanche Ratings
• Dynamic dV/dt Rating
• Simple Drive Requirements
• Ease of Paralleling
• Lead (Pb)-free Available
DESCRIPTION
The Power MOSFET technology is the key to Vishay’s
advanced line of Power MOSFET transistors. The efficient
geometry and unique processing of this latest “State of the
Art” design achieves: very low on-state resistance combined
with high transconductance; superior reverse energy and
diode recovery dV/dt.
The Power MOSFET transistors also feature all of the well
established advantages of MOSFET’S such as voltage
control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
Surface mount packages enhance circuit performance by
reducing stray inductances and capacitance. The TO-252
surface mount package brings the advantages of Power
MOSFET’s to high volume applications where PC Board
surface mounting is desirable. The surface mount option
IRFR9020, SiHFR9020 is provided on 16mm tape. The
straight lead option IRFU9020, SiHFU9020 of the device is
called the IPAK (TO-251).
They are well suited for applications where limited heat
dissipation is required such as, computers and peripherals,
telecommunication equipment, DC/DC converters, and a
wide range of consumer products.
a
a
SYMBOL
DPAK (TO-252)
IRFR9020TRLPbF
SiHFR9020TL-E3
IRFR9020TRL
SiHFR9020TL
V
V
E
E
I
I
I
DM
AR
DS
GS
AS
AR
D
a
a
a
a
LIMIT
± 20
- 9.9
- 6.3
0.33
- 9.9
- 50
- 40
440
4.2
Vishay Siliconix
IPAK (TO-251)
IRFU9020PbF
SiHFU9020-E3
IRFU9020
SiHFU9020
www.vishay.com
UNIT
W/°C
RoHS*
COMPLIANT
mJ
mJ
V
A
A
Available
1

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IRFR9020 Summary of contents

Page 1

... Power MOSFET’s to high volume applications where PC Board surface mounting is desirable. The surface mount option IRFR9020, SiHFR9020 is provided on 16mm tape. The straight lead option IRFU9020, SiHFU9020 of the device is called the IPAK (TO-251). They are well suited for applications where limited heat ...

Page 2

... IRFR9020, IRFU9020, SiHFR9020, SiHFU9020 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS T PARAMETER Maximum Power Dissipation c Peak Diode Recovery dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14 Starting ° 5.1 mH, R ...

Page 3

... Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14). b. Pulse width ≤ 300 µs; duty cycle ≤ TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics Fig Typical Transfer Characteristics Document Number: 90350 S09-0074-Rev. A, 02-Feb-09 IRFR9020, IRFU9020, SiHFR9020, SiHFU9020 SYMBOL TEST CONDITIONS MOSFET symbol I S showing the ...

Page 4

... IRFR9020, IRFU9020, SiHFR9020, SiHFU9020 Vishay Siliconix Fig Typical Transconductance vs. Drain Current Fig Typical Source-Drain Diode Forward Voltage www.vishay.com 4 Fig Breakdown Voltage vs. Temperature Fig Normalized On-Resistance vs. Temperature Document Number: 90350 S09-0074-Rev. A, 02-Feb-09 ...

Page 5

... Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage Document Number: 90350 S09-0074-Rev. A, 02-Feb-09 IRFR9020, IRFU9020, SiHFR9020, SiHFU9020 Fig Typical On-Resistance vs. Drain Current Fig Maximum Drain Current vs. Case Temperature Vishay Siliconix www.vishay.com 5 ...

Page 6

... IRFR9020, IRFU9020, SiHFR9020, SiHFU9020 Vishay Siliconix Fig. 13a - Maximum Avalanche vs. Starting Junction Temperature Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration www.vishay.com 6 Fig. 13b - Unclamped Inductive Test Circuit Fig. 13c - Unclamped Inductive Waveforms Document Number: 90350 S09-0074-Rev. A, 02-Feb-09 ...

Page 7

... Fig. 15a - Switching Time Waveforms Charge Fig. 16a - Basic Gate Charge Waveform Document Number: 90350 S09-0074-Rev. A, 02-Feb-09 IRFR9020, IRFU9020, SiHFR9020, SiHFU9020 t t d(off) f Vishay Siliconix Fig. 15b - Switching Time Test Circuit Fig. 16b - Gate Charge Test Circuit www.vishay.com 7 ...

Page 8

... IRFR9020, IRFU9020, SiHFR9020, SiHFU9020 Vishay Siliconix D.U. Compliment N-Channel of D.U.T. for driver Driver gate drive D.U.T. I Reverse recovery current D.U.T. V Re-applied voltage Inductor current * V Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 9

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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